- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49840 > 2N6609 (MOTOROLA INC) 16 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N6609 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 16 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 205K |
| 代理商： | 2N6609 |
2N3773 2N6609
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (1)
*Collector–Emitter Breakdown Voltage
(IC = 0.2 Adc, IB = 0)
VCEO(sus)
140
—
Vdc
*Collector–Emitter Sustaining Voltage
(IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms)
VCEX(sus)
160
—
Vdc
Collector–Emitter Sustaining Voltage
(IC = 0.2 Adc, RBE = 100 Ohms)
VCER(sus)
150
—
Vdc
*Collector Cutoff Current
(VCE = 120 Vdc, IB = 0)
ICEO
—
10
mAdc
*Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
—
2
10
mAdc
Collector Cutoff Current
(VCB = 140 Vdc, IE = 0)
ICBO
—
2
mAdc
*Emitter Cutoff Current
(VBE = 7 Vdc, IC = 0)
IEBO
—
5
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
*(IC = 8 Adc, VCE = 4 Vdc)
(IC = 16 Adc, VCE = 4 Vdc)
hFE
15
5
60
—
—
Collector–Emitter Saturation Voltage
*(IC = 8 Adc, IB = 800 mAdc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
—
1.4
4
Vdc
*Base–Emitter On Voltage
(IC = 8 Adc, VCE = 4 Vdc)
VBE(on)
—
2.2
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common–Emitter
Small–Signal, Short–Circuit, Forward Current Transfer Ratio
(IC = 1 A, f = 50 kHz)
|hfe|
4
—
—
*Small–Signal Current Gain
(IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz)
hfe
40
—
—
SECOND BREAKDOWN CHARACTERISTICS
Second Breakdown Collector Current with Base Forward Biased
t = 1 s (non–repetitive), VCE = 100 V, See Figure 12
IS/b
1.5
—
Adc
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle v 2%.
* Indicates JEDEC Registered Data.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3773 | 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N3789X | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N3790 | 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N3790 | 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N3716 | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6609 | 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-3 |
| 2N6609G | 功能描述:兩極晶體管 - BJT 16A 140V 150W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N661 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:alloy-junction germanium transistors |
| 2N6617 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 10MA I(C) | MICRO-X |
| 2N6618 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 10MA I(C) | SOT-100VAR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。