參數(shù)資料
型號(hào): 2N6519RL
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, TO-226AA, 3 PIN
文件頁數(shù): 23/37頁
文件大?。?/td> 430K
代理商: 2N6519RL
NPN 2N6515 2N6517 PNP 2N6519 2N6520
2–71
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
100
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
h
FE
,D
C
U
RRENT
G
AIN
200
100
20
30
50
70
VCE = 10 V
TJ = 125°C
25
°C
–55
°C
2N6515
NPN
IC, COLLECTOR CURRENT (mA)
–100
–1.0
– 2.0 – 3.0
– 5.0 – 7.0 –10
– 20 – 30
– 50 – 70
h
FE
,DC
CURRENT
GAIN
200
100
20
30
50
70
VCE = –10 V
TJ = 125°C
25
°C
–55
°C
2N6519
PNP
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (mA)
100
1.0
2.0
3.0
5.0 7.0
10
20
30
50 70
200
100
10
20
50
70
VCE = 10 V
TJ = 125°C
25
°C
–55
°C
2N6517
IC, COLLECTOR CURRENT (mA)
–100
–1.0
– 2.0 – 3.0
– 5.0 – 7.0 –10
– 20 – 30
– 50 – 70
VCE = –10 V
TJ = 125°C
25
°C
–55
°C
2N6520
Figure 3. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
100
1.0
2.0
3.0
5.0 7.0 10
20
30
50 70
100
20
30
50
70
2N6515, 2N6517
IC, COLLECTOR CURRENT (mA)
–100
–1.0
– 2.0 – 3.0
– 5.0 – 7.0 –10
– 20 – 30
– 50 – 70
2N6519, 2N6520
f,
C
U
RRENT–
G
AIN
BAN
DW
ID
T
H
PRO
DU
CT
(
M
Hz
)
T
f
,CURRENT–GAIN
BANDWIDTH
PRODUCT
(MHz)
T
h
FE
,D
C
U
RRENT
G
AIN
h
FE
,DC
CURRENT
GAIN
10
100
20
30
50
70
10
TJ = 25°C
VCE = 20 V
f = 20 MHz
TJ = 25°C
VCE = – 20 V
f = 20 MHz
30
200
100
10
20
50
70
30
相關(guān)PDF資料
PDF描述
2N6519RLRA 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N6519 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5221 600 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4058 50 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4971 600 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6519RLRA 制造商:Rochester Electronics LLC 功能描述:- Bulk
2N6519TA 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N6519TA_Q 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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2N651AJ 制造商:Motorola Inc 功能描述: