參數(shù)資料
型號： 2N6519RL
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： PLASTIC, TO-226AA, 3 PIN
文件頁數(shù)： 12/37頁
文件大小： 430K
代理商： 2N6519RL
NPN 2N6515 2N6517 PNP 2N6519 2N6520
2–70
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (Continued)
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
2N6515
(VCB = 200 Vdc, IE = 0)
2N6519
(VCB = 250 Vdc, IE = 0)
2N6517, 2N6520
ICBO
—
50
nAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
2N6515, 2N6517
(VEB = 4.0 Vdc, IC = 0)
2N6519, 2N6520
IEBO
—
50
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
2N6515
2N6519
2N6517, 2N6520
(IC = 10 mAdc, VCE = 10 Vdc)
2N6515
2N6519
2N6517, 2N6520
(IC = 30 mAdc, VCE = 10 Vdc)
2N6515
2N6519
2N6517, 2N6520
(IC = 50 mAdc, VCE = 10 Vdc)
2N6515
2N6519
2N6517, 2N6520
(IC = 100 mAdc, VCE = 10 Vdc)
2N6515
2N6519
2N6517, 2N6520
hFE
35
30
20
50
45
30
50
45
30
45
40
20
25
20
15
—
300
270
200
220
200
—
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
—
0.30
0.35
0.50
1.0
Vdc
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
VBE(sat)
—
0.75
0.85
0.90
Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc)
VBE(on)
—
2.0
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(1)
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
fT
40
200
MHz
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
6.0
pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
2N6515, 2N6517
2N6519, 2N6520
Ceb
—
80
100
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc)
ton
—
200
s
Turn–Off Time
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc)
toff
—
3.5
s
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.
相關(guān)PDF資料
PDF描述
2N6519RLRA 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N6519 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5221 600 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4058 50 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6519RLRA 制造商:Rochester Electronics LLC 功能描述:- Bulk
2N6519TA 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N6519TA_Q 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N651A 制造商: 功能描述: 制造商:Motorola Inc 功能描述: 制造商:undefined 功能描述:
2N651AJ 制造商:Motorola Inc 功能描述:
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