參數資料
型號： 2N6488
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： PLASTIC, CASE 221A-06, 3 PIN
文件頁數： 2/6頁
文件大?。?/td> 151K
代理商： 2N6488
2N6487 2N6488 2N6490 2N6491
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
2N6487, 2N6490
2N6488, 2N6491
VCEO(sus)
60
80
—
Vdc
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, VBE = 1.5 Vdc)
2N6487, 2N6490
2N6488, 2N6491
VCEX
70
90
—
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
2N6487, 2N6490
(VCE = 40 Vdc, IB = 0)
2N6488, 2N6491
ICEO
—
1.0
mAdc
Collector Cutoff Current
(VCE = 65 Vdc, VEB(off) = 1.5 Vdc)
2N6487, 2N6490
(VCE = 85 Vdc, VEB(off) = 1.5 Vdc)
2N6488, 2N6491
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6487, 2N6490
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6488, 2N6491
ICEX
—
500
5.0
Adc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
—
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
hFE
20
5.0
150
—
—
Collector–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.5 Adc)
(IC = 15 Adc, IB = 5.0 Adc)
VCE(sat)
—
1.3
3.5
Vdc
Base–Emitter On Voltage
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
VBE(on)
—
1.3
3.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz)
fT
5.0
—
MHz
Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
25
—
—
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
(2) fT = |hfe| ftest.
Figure 2. Switching Time Test Circuit
1000
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
t,
TIME
(ns)
500
50
20
0.2
20
TC = 25°C
VCC = 30 V
IC/IB = 10
10
1.0
5.0
tr
0.5
2.0
10
200
100
td @ VBE(off) [ 5.0 V
NPN
PNP
+ 10 V
0
SCOPE
RB
– 4 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
s
– 10 V
D1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
FOR PNP, REVERSE ALL POLARITIES.
VCC
+ 30 V
相關PDF資料
PDF描述
2N6491 15 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2N6498WD 5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6045D1 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6498AJ 5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6044AF 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
相關代理商/技術參數
參數描述
2N6488G 功能描述:兩極晶體管 - BJT 15A 80V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N6489 制造商:n/a 功能描述:2N6489 S3B2F 制造商:Harris Corporation 功能描述:
2N6490 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N649093 制造商:Harris Corporation 功能描述:
2N6490G 功能描述:兩極晶體管 - BJT 15A 60V 75W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*