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參數(shù)資料
| 型號(hào)： | 2N6491 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 15 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-06, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 151K |
| 代理商： | 2N6491 |
1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general–purpose amplifier and switching applications.
DC Current Gain Specified to 15 Amperes —
hFE = 20–150 @ IC = 5.0 Adc
hFE = 5.0 (Min) @ IC = 15 Adc
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) – 2N6487, 2N6490
VCEO(sus) = 80 Vdc (Min) – 2N6488, 2N6491
High Current Gain — Bandwidth Product
fT = 5.0 MHz (Min) @ IC = 1.0 Adc
TO–220AB Compact Package
MAXIMUM RATINGS (1)
Rating
Symbol
2N6487
2N6490
2N6488
2N6491
Unit
Collector–Emitter Voltage
VCEO
60
80
Vdc
Collector–Base Voltage
VCB
70
90
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
IC
15
Adc
Base Current
IB
5.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
75
0.6
Watts
W/
_C
Total Power Dissipation @ TA = 25_C
Derate above 25
_C
PD
1.8
0.014
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.67
_C/W
Thermal Resistance, Junction to Ambient
R
θJA
70
_C/W
(1) Indicates JEDEC Registered Data.
80
40
20
0
20
40
80
100
120
160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
60
TA TC
4.0
2.0
1.0
3.0
0
60
140
TA
TC
0
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6487/D
Motorola, Inc. 1995
2N6487
2N6488
2N6490
2N6491
*Motorola Preferred Device
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 – 80 VOLTS
75 WATTS
*
CASE 221A–06
TO–220AB
NPN
PNP
REV 7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N649104 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N6491G | 功能描述:兩極晶體管 - BJT 15A 80V 75W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6492 | 制造商:SAVANTIC 制造商全稱(chēng):Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2N6493 | 制造商:SAVANTIC 制造商全稱(chēng):Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2N6494 | 制造商:SAVANTIC 制造商全稱(chēng):Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
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