- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄371468 > 2N6353 (MICROSEMI CORP) NPN DARLINGTON POWER SILICON TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N6353 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 中文描述： | 5 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 封裝： | TO-66, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | 2N6353 |
2N6350, 2N6351, 2N6352, 2N6353 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
V
(BR)
EBO
Min.
6.0
12
Max.
Unit
Vdc
Emitter-Base Breakdown Voltage
I
EB
= 12 mAdc, Base 1 Open
I
EB
= 12 mAdc, Base 2 Open
Collector-Emitter Cutoff Current
V
EB1
= 2.0 Vdc, R
B2E
= 100
, V
CE
= 80 Vdc
V
EB1
= 2.0 Vdc, R
B2E
= 100
, V
CE
= 150 Vdc 2N6351, 2N6353
ON CHARACTERISTICS
(6)
Forward-Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, R
B2E
= 1.0
I
C
= 5.0 Adc, V
CE
= 5.0 Vdc, R
B2E
= 100
I
C
= 10 Adc, V
CE
= 5.0 Vdc, R
B2E
= 100
I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, R
B2E
= 1.0
I
C
= 5.0 Adc, V
CE
= 5.0 Vdc, R
B2E
= 100
I
C
= 10 Adc, V
CE
= 5.0 Vdc, R
B2E
= 100
Collector-Emitter Saturation Voltage
I
C
= 5.0 Adc, R
B2E
= 100
, I
B1
= 5.0 mAdc
I
C
= 5.0 Adc, R
B2E
= 100
, I
B1
= 10 mAdc
Base-Emitter Voltage
I
C
= 5.0 Adc, V
CE
= 5.0 Vdc, R
B2E
= 100
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 10 Vdc, R
B2E
= 100
; f = 10 MHz
Output Capacitance
V
CB1
= 10 Vdc, 100 kHz
≤
f
≤
1.0 MHz, Base 2 Open
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 5.0 Adc (See fig 4 for 2N6350, 2N6352)
(See fig 5 for 2N6350, 2N6352)
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 5.0 Adc (See fig 4 for 2N6350, 2N6352)
(See fig 5 for 2N6350, 2N6352)
SAFE OPERATING AREA
DC Tests
T
C
= +100
0
C, 1 Cycle, t
≥
1.0 s, t
r
+ t
f
= 10
μ
s, R
B2E
= 100
(See fig 6 for 2N6350, 2N6351)
Test 1
V
CE
= 1.5Vdc, I
C
= 3.3 Adc
Test 2
V
CE
= 30 Vdc, I
C
= 167 mAdc
Test 3
V
CE
= 80 Vdc, I
C
= 35 mAdc
Test 4
V
CE
= 150 Vdc, I
C
= 13 mAdc
T
C
= +100
0
C, 1 Cycle, t
≥
1.0 s, t
r
+ t
f
= 10
μ
s, R
B2E
= 100
(See fig 7 for 2N6352, 2N6353)
Test 1
V
CE
= 5.0Vdc, I
C
= 5.0 Adc
Test 2
V
CE
= 10 Vdc, I
C
= 2.5 Adc
Test 3
V
CE
= 80 Vdc, I
C
= 95 mAdc
Test 4
V
CE
= 150 Vdc, I
C
= 35 mAdc
(6) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
2N6350, 2N6352
I
CEX
1.0
1.0
μ
Adc
2N6350, 2N6352
2N6351, 2N6353
h
FE
2,000
2,000
400
1,000
1,000
200
10,000
10,000
2N6350, 2N6352
2N6351, 2N6353
V
CE(sat)
1.5
2.5
2.5
Vdc
V
BE1(on)
Vdc
h
fe
5.0
25
120
C
obo
pF
t
on
0.5
μ
s
t
off
1.2
μ
s
2N6350, 2N6351
2N6350, 2N6351
2N6350
2N6351
2N6352, 2N6353
2N6352, 2N6353
2N6352
2N6353
120101
Page 2 of 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6362 | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2N6364 | TRANSISTOR | BJT | NPN | 33V V(BR)CEO | 10A I(C) | SOT-119VAR |
| 2N6369 | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2N6378 | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2N6387G | Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6353JAN | 制造商:Microsemi Corporation 功能描述:Trans Darlington NPN 150V 5A 4-Pin(3+Tab) TO-213AA |
| 2N6354 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 10A 3PIN TO-3 - Bulk |
| 2N6355 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2N6356 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2N6357 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。