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參數(shù)資料
| 型號： | 2N6344G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Triacs Silicon Bidirectional Thyristors |
| 中文描述： | 600 V, 8 A, TRIAC, TO-220AB |
| 封裝： | LEAD FREE, CASE 221A-07, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 77K |
| 代理商： | 2N6344G |
2N6344
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
R
JC
2.2
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Sec
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
;
Gate Open)
T
J
= 25
°
C
T
J
= 100
°
C
I
DRM
,
I
RRM
10
2.0
A
mA
ON CHARACTERISTICS
Peak OnState Voltage
(I
TM
=
11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
2%)
V
TM
1.3
1.55
V
Gate Trigger Current (Continuous dc) (V
D
= 12 Vdc, R
L
= 100 )
Quadrant I: MT2(+), G(+)
Quadrant II: MT2(+), G()
Quadrant III: MT2(), G()
Quadrant IV: MT2(), G(+)
MT2(+), G(+); MT2(), G() T
C
= 40
°
C
MT2(+), G(); MT2(), G(+) T
C
= 40
°
C
Both
2N6349 only
Both
2N6349 only
I
GT
12
12
20
35
50
75
50
75
100
125
mA
Gate Trigger Voltage (Continuous dc) (V
D
= 12 Vdc, R
L
= 100 )
Quadrant I: MT2(+), G(+)
Quadrant II: MT2(+), G()
Quadrant III: MT2(), G()
Quadrant IV: MT2(), G(+)
MT2(+), G(+); MT2(), G() T
C
= 40
°
C
MT2(+), G(); MT2(), G(+) T
C
= 40
°
C
Both
2N6349 only
Both
2N6349 only
V
GT
0.9
0.9
1.1
1.4
2.0
2.5
2.0
2.5
2.5
3.0
V
Gate NonTrigger Voltage (Continuous dc)
(V
D
= Rated V
DRM
, R
L
= 10 k , T
J
= 100
°
C)
MT2(+), G(+); MT2(), G(); MT2(+), G(); MT2(), G()
V
GD
0.2
V
Holding Current (V
D
= 12 Vdc, Gate Open)
(Initiating Current =
T
C
= 25
°
C
*T
C
= 40
°
C
200 mA)
I
H
6.0
40
75
mA
Turn-On Time
(V
D
= Rated V
DRM
, I
TM
= 11 A, I
GT
= 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s)
t
gt
1.5
2.0
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(V
D
= Rated V
DRM
, I
TM
= 11 A, Commutating di/dt = 4.0 A/ms, Gate Unenergized, T
C
= 80
°
C)
Indicates JEDEC Registered Data.
dv/dt(c)
5.0
V/ s
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PDF描述 |
|---|---|
| 2N6344 | 8 Ampere RMS Silicon Bidirectional Thyristor(8A（均方根值）,600V硅雙向晶閘管) |
| 2N6349 | 8 Ampere RMS Silicon Bidirectional Thyristor(8A（均方根值）,800V硅雙向晶閘管) |
| 2N6350 | NPN DARLINGTON POWER SILICON TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6345 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:TO-220AB |
| 2N6345A | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SILICON BIDIRECTIONAL THYRISTORS |
| 2N6346 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:TO-220AB |
| 2N6346A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRIAC TO-220 200V 15A |
| 2N6347 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:TO-220AB |
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