參數(shù)資料
型號: 2N6073B
廠商: CENTRAL SEMICONDUCTOR CORP
元件分類: 晶閘管
英文描述: SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS
中文描述: 400 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-126
封裝: TO-126, 3 PIN
文件頁數(shù): 1/2頁
文件大小: 81K
代理商: 2N6073B
2N6071, A, B
2N6073, A, B
2N6075, A, B
SENSITIVE GATE TRIAC
4.0 AMPS, 200 THRU 600 VOLTS
TO-126 CASE
Central
Semiconductor Corp.
TM
R0 (27-April 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6071, A, B
series types are silicon sensitive gate triacs
designed for such applications as light dimmers,
motor controls, heating controls and power
supplies.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS:
(TJ=25°C unless otherwise noted)
2N6071
2N6071A
2N6071B
200
2N6073
2N6073A
2N6073B
400
4.0
30
3.7
10
0.5
5.0
-40 to +150
-40 to +110
3.5
75
2N6075
2N6075A
2N6075B
600
SYMBOL
VDRM, VRRM
IT(RMS)
ITSM
I
2
t
PGM
PG(AV)
VGM
Tstg
TJ
Θ
JC
Θ
JA
TL
UNITS
V
A
A
A
2
s
W
W
V
°C
°C
°C/W
°C/W
°C
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=85°C)
Peak One Cycle Surge (60Hz, TJ=110°C)
I
2
t Value for Fusing (t=8.3ms)
Peak Gate Power (TC=85°C)
Average Gate Power (t=8.3ms, TC=85°C)
Peak Gate Voltage (TC=85°C)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
Maximum Lead Temperature
260
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
A Series
TYP MAX
B Series
TYP MAX
SYMBOL
IDRM, IRRM
IDRM, IRRM
IGT
IGT
IGT
IGT
IGT
IGT
IGT
IGT
IH
IH
VGT
VGT
VTM
ton
dv/dt
TEST CONDITIONS
VD=Rated VDRM, VRRM, TJ=25°C
VD=Rated VDRM, VRRM, TJ=110°C
VD=12V, RL=100
,
QUAD I, TJ=25°C
VD=12V, RL=100
,
QUAD II, TJ=25°C
VD=12V, RL=100
,
QUAD III, TJ=25°C
VD=12V, RL=100
,
QUAD IV, TJ=25°C
VD=12V, RL=100
,
QUAD I, TJ= -40°C
VD=12V, RL=100
,
QUAD II, TJ= -40°C
VD=12V, RL=100
,
QUAD III, TJ= -40°C
VD=12V, RL=100
,
QUAD IV, TJ= -40°C
VD=12V, IT=1.0A, TJ=25°C
VD=12V, IT=1.0A, TJ= -40°C
VD=12V, RL=100
,
TJ=25°C, QUAD I, II, III, IV
VD=12V, RL=100
,
TJ= -40°C, QUAD I, II, III, IV
ITM=6.0A
ITM=14A, IGT=100mA
VD= Rated VDRM, ITM=5.7A
,
TJ=85°C
TYP MAX
UNITS
μA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
μs
V/μs
10
2.0
30
-
30
-
60
-
60
-
30
70
2.0
2.5
2.0
10
2.0
5.0
5.0
5.0
10
20
20
20
30
15
30
2.0
2.5
2.0
10
2.0
3.0
3.0
3.0
5.0
15
15
15
20
15
30
2.0
2.5
2.0
1.5
5.0
1.5
5.0
1.5
5.0
相關(guān)PDF資料
PDF描述
2N6075 SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS
2N6075A SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS
2N6075B SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS
2N6071 TRIACs 4 AMPERES RMS 200 thru 600 VOLTS
2N6071A TRIACs 4 AMPERES RMS 200 thru 600 VOLTS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6073BG 功能描述:雙向可控硅 Sensitive Gate RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
2N6074 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|500V V(DRM)|4A I(T)RMS|TO-126
2N6074A 制造商:Motorola Inc 功能描述:Triac, 500v V(drm), 4a I(t)rms, To-126
2N6074B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|500V V(DRM)|4A I(T)RMS|TO-126
2N6075 制造商:ON Semiconductor 功能描述:THY C77 4A 600V TRIAC 制造商:Distributed By MCM 功能描述:600V 4A Triac TO-225