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參數(shù)資料
| 型號： | 2N5912 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Matched N-Channel JFET Pairs(最小柵源擊穿電壓-25V，柵極工作電流-1pA的N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | 匹配N溝道場效應(yīng)對（最小柵源擊穿電壓- 25V的，柵極工作電流，僅為1pA的N溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 79K |
| 代理商： | 2N5912 |
2N5911/5912
4
Siliconix
P-37407—Rev. C, 04-Jul-94
Typical Characteristics (Cont’d)
10
0
–0.4
–1.6
–2
8
2
0
10
0
–1.2
–1.6
–0.4
–2
8
4
2
0
6
4
6
–0.8
–1.2
–0.8
30
0
–4
–5
–1
24
6
0
18
12
–2
–3
10
–5
–4
–1
0
8
2
0
6
4
–2
–3
Transfer Characteristics
V
GS
– Gate-Source Voltage (V)
–
I
D
T
A
= –55 C
125 C
Transconductance vs. Gate-Source Voltage
V
GS
– Gate-Source Voltage (V)
T
A
= –55 C
125 C
Transfer Characteristics
T
A
= –55 C
125 C
V
GS
– Gate-Source Voltage (V)
g
f
T
A
= –55 C
Transconductance vs. Gate-Source Voltage
g
f
–
I
D
V
GS
– Gate-Source Voltage (V)
125 C
1
10
0.1
50
40
20
10
0
30
I
D
– Drain Current (mA)
A
V
g
fs
R
L
R
L
g
os
1
R
L
10 V
I
D
Assume V
DD
= 15 V, V
DS
= 5 V
V
GS(off)
= –2 V
A
V
–
Circuit Voltage Gain vs. Drain Current
1
10
100
200
160
80
40
0
120
V
GS(off)
= –2 V
T
A
= 25 C
On-Resistance vs. Drain Current
I
D
– Drain Current (mA)
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= –2 V
V
DS
= 10 V
V
GS(off)
= –5 V
V
DS
= 10 V
V
GS(off)
= –2 V
V
GS(off)
= –5 V
V
DS
= 10 V
f = 1 kHz
–5 V
25 C
25 C
25 C
25 C
V
GS(off)
= –5 V
r
D
–
)
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| 2N6071A | SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS |
| 2N6071B | SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5912 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET DUAL N TO-78 |
| 2N5912_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
| 2N5912C_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
| 2N5912-E3 | 功能描述:JFET 25V 1pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5913 | 制造商:STMicroelectronics 功能描述:2N5913 |
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