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參數(shù)資料
| 型號： | 2N5882 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 146K |
| 代理商： | 2N5882 |
2N5882
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
θJC(t) = r(t) θJC
θJC = 1.1°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
SINGLE PULSE
0.1
0.02 0.03
0.3
3.0
30
300
0.01
100
1.0
Figure 5. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
50
30
20
10
0.1
2.0
3.0
7.0
10
100
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
(SINGLE PULSE)
70
5.0
I C
,COLLECT
OR
CURRENT
(AMP)
TJ = 200°C
CURVES APPLY BELOW RATED VCEO
dc
3.0
0.5
0.3
5.0
0.2
0.1 ms
2.0
1.0
20
30
50
0.5 ms
1.0 ms
5.0 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 200
_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
10
0.2
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
5.0
3.0
0.7
0.3
0.1
0.3
0.5 0.7
1.0
3.0
7.0
20
TJ = 25°C
VCC = 30 V
IC/IB = 0
IB1 = IB2
0.2
t,TIME
(
s)
ts
2.0
2000
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
60
2.0
5.0
10
20
100
0.2
0.5
1.0
C,
CAP
ACIT
ANCE
(pF)
1000
500
100
TJ = 25°C
Cib
2.0
7.0
10
700
5.0
tf
Cob
1.0
0.5
300
200
50
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5882/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon NPN High Power Transistor |
| 2N5883 | 功能描述:兩極晶體管 - BJT 25A 60V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5883 | 制造商:UNBRANDED 功能描述:TRANSISTOR PNP TO-3 |
| 2N5883/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Silicon High-Power Transistors |
| 2N5883G | 功能描述:兩極晶體管 - BJT 25A 60V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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