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參數(shù)資料
| 型號： | 2N5882 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 146K |
| 代理商： | 2N5882 |
2N5882
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
80
—
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
ICEO
—
1.0
mAdc
Collector Cutoff Current
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
—
0.5
5.0
mAdc
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO
—
0.5
mAdc
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
IEBO
—
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 2.0 Adc, VCE = 4.0 Vdc)
(IC = 6.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
hFE
35
20
4.0
—
100
—
—
Collector–Emitter Saturation Voltage (1)
(IC = 7.0 Adc, IB = 0.7 Adc)
(IC = 15 Adc, IB = 3.75 Adc)
VCE(sat)
—
1.0
4.0
Vdc
Base–Emitter Saturation Voltage (1)
(IC = 15 Adc, IB = 3.75 Adc)
VBE(sat)
—
2.5
Vdc
Base–Emitter On Voltage (1)
(IC = 6.0 Adc, VCE = 4.0 Vdc)
VBE(on)
—
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
4.0
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
—
400
pF
Small–Signal Current Gain (IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
20
—
—
SWITCHING CHARACTERISTICS
Rise Time
(VCC = 30 Vdc IC =6 0Adc
tr
—
0.7
s
Storage Time
(VCC = 30 Vdc, IC = 6.0 Adc,
IB1 = IB2 = 0.6 Adc See Figure 2)
ts
—
1.0
s
Fall Time
IB1 = IB2 = 0.6 Adc See Figure 2)
tf
—
0.8
s
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%
(2) fT = |hfe| ftest.
Figure 2. Switching Times Test Circuit
25
s
0
– 8.0 V
RB
+ 7.0 V
D1
SCOPE
VCC
– 30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
51
D1 MUST BE FAST RECOVERY TYPE, e.g.
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
FOR CURVES OF FIGURES 3 and 6,
RB and RC ARE VARIED TO OBTAIN
DESIRED CURRENT LEVELS
For PNP test circuit,
reverse all polarities.
5.0
15
+10 V
Figure 3. Turn–On Time
2.0
0.2
IC, COLLECTOR CURRENT (AMP)
0.7
0.2
0.1
0.02
0.3
0.5 0.7 1.0
3.0
20
VCC = 30 V
IC/IB = 10
TJ = 25°C
0.07
t,TIME
(
s)
tr
2.0
0.5
1.0
10
0.05
0.03
5.0 7.0
td @ VBE(off) ≈ 5.0 V
0.3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5882/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon NPN High Power Transistor |
| 2N5883 | 功能描述:兩極晶體管 - BJT 25A 60V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5883 | 制造商:UNBRANDED 功能描述:TRANSISTOR PNP TO-3 |
| 2N5883/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Silicon High-Power Transistors |
| 2N5883G | 功能描述:兩極晶體管 - BJT 25A 60V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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