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參數(shù)資料
| 型號： | 2N5882 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN High-Power Transistor(15A，160W，80V（集電極-發(fā)射極），硅NPN大功率晶體管) |
| 中文描述： | 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 89K |
| 代理商： | 2N5882 |
2N5882
http://onsemi.com
3
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.7
0.5
0.010.01
0.3
0.2
0.1
0.07
0.05
0.03
0.02
r
R
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
θ
JC
(t) = r(t)
θ
JC
θ
JC
= 1.1
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
SINGLE PULSE
0.1
0.02 0.03
0.3
3.0
30
300
0.01
100
1.0
Figure 5. Active–Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
50
30
20
10
0.1
2.0
3.0
7.0
10
100
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ T
C
= 25
°
C
(SINGLE PULSE)
CURVES APPLY BELOW RATED V
CEO
70
5.0
3.0
2.0
I
T
J
= 200
°
C
dc
0.5
0.3
0.2
5.0
0.1 ms
1.0
20
30
50
0.5 ms
1.0 ms
5.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
< 200 C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
10
7.0
0.2
Figure 6. Turn–Off Time
I
C
, COLLECTOR CURRENT (AMP)
5.0
3.0
0.7
0.5
0.3
0.1
0.3
0.5 0.7
1.0
3.0
7.0
20
T
J
= 25
°
C
V
CC
= 30 V
I
C
/I
B
= 0
I
B1
= I
B2
0.2
t
t
s
2.0
2000
0.1
Figure 7. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
60
2.0
5.0
10
20
100
0.2
0.5
1.0
C
1000
500
100
T
J
= 25
°
C
C
ib
2.0
10
700
5.0
t
f
C
ob
1.0
300
200
50
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2N5882/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon NPN High Power Transistor |
| 2N5883 | 功能描述:兩極晶體管 - BJT 25A 60V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5883 | 制造商:UNBRANDED 功能描述:TRANSISTOR PNP TO-3 |
| 2N5883/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Silicon High-Power Transistors |
| 2N5883G | 功能描述:兩極晶體管 - BJT 25A 60V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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