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參數(shù)資料
| 型號(hào)： | 2N5882 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN High-Power Transistor(15A，160W，80V（集電極-發(fā)射極），硅NPN大功率晶體管) |
| 中文描述： | 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 89K |
| 代理商： | 2N5882 |
Silicon NPN High-Power
Transistor
. . . designed for general–purpose power amplifier and switching
applications.
Collector–Emitter Sustaining Voltage —
V
CEO(sus)
= 80 Vdc (Min)
DC Current Gain —
h
FE
= 20 (Min) @ I
C
= 6.0 Adc
Low Collector — Emitter Saturation Voltage —
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 7.0 Adc
High Current — Gain–Bandwidth Product —
f
T
= 4.0 MHz (Min) @ I
C
= 1.0 Adc
re–registration reflecting these changes has been requested. All above values meet or
exceed present JEDEC registered data.
Rating
Symbol
Max
Unit
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Peak
V
CB
V
EB
I
C
80
5.0
15
30
Vdc
Vdc
Adc
Total Device Dissipation @ T
= 25 C
Derate above 25 C
P
160
0.915
Watts
W/ C
Temperature Range
J
stg
–65 to +200
θ
P
160
00
25
50
75
100
125
150
175
200
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (
°
C)
120
80
40
20
140
100
60
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 1
1
Publication Order Number:
2N5882/D
2N5882
ON Semiconductor Preferred Device
15 AMPERE
SILICON
POWER TRANSISTOR
80 VOLTS
160 WATTS
CASE 1–07
TO–204AA
(TO–3)
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| 2N5883 | Complementary Silicon PNP Power Transistor(25A，200W，60V（集電極-發(fā)射極），補(bǔ)償型硅PNP功率晶體管) |
| 2N5884 | Complementary Silicon High Power Transistors(補(bǔ)償型硅高功率晶體管) |
| 2N5885 | Complementary Silicon NPN Power Transistor(25A，200W，60V（集電極-發(fā)射極），補(bǔ)償型硅NPN功率晶體管) |
| 2N5886 | Complementary Silicon NPN Power Transistor(25A，200W，80V（集電極-發(fā)射極），補(bǔ)償型硅NPN功率晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5882/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon NPN High Power Transistor |
| 2N5883 | 功能描述:兩極晶體管 - BJT 25A 60V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5883 | 制造商:UNBRANDED 功能描述:TRANSISTOR PNP TO-3 |
| 2N5883/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Silicon High-Power Transistors |
| 2N5883G | 功能描述:兩極晶體管 - BJT 25A 60V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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