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參數(shù)資料
| 型號： | 2N5769D26Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 296K |
| 代理商： | 2N5769D26Z |
2N5769
NPN Switching Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 10 mA, IB = 015V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, IC = 0
4.5
V
V(BR)CES
Collector-Emitter Breakdown Voltage
IC = 10
A, I
B = 0
40
V
ICBO
Collector Cutoff Current
VCB = 20 V, IE = 0
VCB = 20 V, IE = 0, TA = 125
°C
0.4
30
A
ICES
Collector Cutoff Current
VCE = 20 V, IB = 0
0.4
A
IEBO
Emitter Cutoff Current
VEB = 4.5 V, IC = 0
1.0
A
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
Ccb
Collector-Base Capacitance
VCB = 5.0 V, f = 1.0 MHz
4.0
pF
hfe
Small-Signal Current Gain
IC = 10 mA, VCE = 10 V,
f = 100 MHz
5.0
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
ton
Turn-on Time
IC = 10 mA,
12
ns
toff
Turn-off Time
IB1 = 3.0 mA, IB2 = 1.5 mA
18
ns
ts
Storage Time
IC = IB1 = IB2 = 10 mA
13
ns
hFE
DC Current Gain
IC = 10 mA, VCE = 0.35 V
TA = - 55
°C
IC = 30 mA, VCE = 0.40 V
IC = 100 mA, VCE = 1.0 V
40
20
30
20
120
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
TA = 125
°C
IC = 30 mA, IB = 3.0 mA
IC = 100 mA, IB = 10 mA
0.2
0.3
0.25
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
TA = 125
°C
IC = 10 mA, IB = 1.0 mA
TA = - 55
°C
IC = 30 mA, IB = 3.0 mA
IC = 100 mA, IB = 10 mA
0.7
0.59
0.85
1.02
1.15
1.6
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5770 | 功能描述:兩極晶體管 - BJT NPN RF Amp/Osc RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5770 | 制造商:Fairchild Semiconductor Corporation 功能描述:RF TRANSISTOR NPN 3-TO-92 ((SP)) |
| 2N5770_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN RF Transistor |
| 2N5770_D26Z | 功能描述:兩極晶體管 - BJT NPN RF Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5770_D27Z | 功能描述:兩極晶體管 - BJT NPN RF Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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