參數(shù)資料
型號(hào): 2N5769L34Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 296K
代理商: 2N5769L34Z
2N5769
Discrete POWER & Signal
Technologies
NPN Switching Transistor
2N5769
This device is designed for high speed saturated switching
applications at currents to 100 mA. Sourced from Process 21.
See PN2369A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
15
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
4.5
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
2N5769
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
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