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參數(shù)資料
| 型號(hào)： | 2N5758 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | METAL, TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 23/61頁(yè) |
| 文件大小： | 384K |
| 代理商： | 2N5758 |
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2N5758
3–72
Motorola Bipolar Power Transistor Device Data
Figure 3. Turn–On Time
t, TIME (ms)
1.0
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.05
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.1
0.2
0.5
1.0
3.0
5.0
10
20
50
100
200
500
1000
θJC = 1.17°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
SINGLE PULSE
0.1
Figure 4. Thermal Response
0.02
1.0
0.06
IC, COLLECTOR CURRENT (AMP)
0.5
0.2
0.1
0.05
0.1
0.2
0.4
0.6
2.0
6.0
VCC = 30 V
IC/IB = 10
VBE(off) = 5.0 V
TJ = 25°C
0.07
t,TIME
(
s)
tr
1.0
0.3
0.7
4.0
td
0.03
0.3
2.0
30
300
0.01
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
3.0
2.0
1.0
0.1
20
30
50
100
300
BONDING WIRE
LIMITED
THERMALLY LIMITED
@ TC = 25°C
SECOND BREAKDOWN LIMITED
200
0.5
I C
,C
OLLE
CT
OR
C
URREN
T
(AMP
)
CURVES APPLY BELOW RATED VCEO
0.3
0.2
70
TJ = 200°C
Figure 5. Active–Region Safe Operating Area
0.05 ms
0.1 ms
1.0 ms
0.5 ms
5.0 ms
2N5760
2N5758
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5759 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 6A 3PIN TO-3 - Bulk |
| 2N575A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 25A I(C) | STR-1/4 |
| 2N5760 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 140V 6A 3PIN TO-3 - Bulk |
| 2N5764 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SI NPN POWER BJT |
| 2N5769 | 功能描述:兩極晶體管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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