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參數(shù)資料
| 型號(hào)： | 2N5758 |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | METAL, TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 12/61頁(yè) |
| 文件大?。?/td> | 384K |
| 代理商： | 2N5758 |
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2N5758
3–71
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
100
—
Vdc
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ICEO
—
1.0
mAdc
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
—
1.0
5.0
mAdc
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
—
1.0
mAdc
Emitter–Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
—
1.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 3.0 Adc, VCE = 2.0 Vdc)
(IC = 6.0 Adc, VCE = 2.0 Vdc)
hFE
25
5.0
100
—
—
Collector–Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 0.3 Adc)
(IC = 6.0 Adc, IB = 1.2 Adc)
VCE(sat)
—
1.0
2.0
Vdc
Base–Emitter On Voltage
(IC = 3.0 Adc, VCE = 2.0 Vdc)
VBE(on)
—
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 20 Vdc, ftest = 0.5 MHz)
fT
1.0
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
—
300
pF
Small–Signal Current Gain
(IC = 2.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
15
—
—
* Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%
(2) fT = |hfe| ftest.
Figure 2. Switching Time Test Circuit
+10 V
25
s
0
–10 V
RB
– 4.0 V
D1
SCOPE
VCC
+ 30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
51
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
*For PNP test circuit, reverse all polarities and D1.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5759 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 6A 3PIN TO-3 - Bulk |
| 2N575A | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 25A I(C) | STR-1/4 |
| 2N5760 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 140V 6A 3PIN TO-3 - Bulk |
| 2N5764 | 制造商:NJSEMI 制造商全稱(chēng):New Jersey Semi-Conductor Products, Inc. 功能描述:SI NPN POWER BJT |
| 2N5769 | 功能描述:兩極晶體管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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