- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33275 > 2N5686 (MICROSEMI CORP-LAWRENCE) 50 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AE PDF資料下載
參數(shù)資料
| 型號： | 2N5686 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | 50 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 120K |
| 代理商： | 2N5686 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0162 Rev. 1 (100546)
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
IC = 5.0Adc, VCE = 2.0Vdc
IC = 25Adc, VCE = 2.0Vdc
IC = 50Adc, VCE = 5.0Vdc
hFE
30
15
5.0
60
Collector-Emitter Saturation Voltage
IC = 25Adc, IB = 2.5Adc
IC = 50Adc, IB = 10Adc
VCE(sat)
1.0
5.0
Vdc
Base-Emitter Saturation Voltage
IC = 25Adc, IB = 2.5Adc
VBE(sat)
2.0
Vdc
Base-Emitter Voltage
IC = 25Adc, VCE = 2.0Adc
VBE(ON)
2.0
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-Circuit, Forward
Current Transfer Ratio
IC = 5.0Adc, VCE = 10Vdc, f = 1.0MHz
|hfe|
2.0
20
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 10Adc, VCE = 5.0Vdc, f = 1.0kHz
hfe
15
Output Capacitance
VCB = 10Vdc, IE = 0, 0.1MHz ≤ f ≤ 1.0MHz
Cobo
1200
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
VCC = 30Vdc; IC = 25Adc; IB1 = 2.5Adc
ton
1.5
μs
Turn-Off Time
VCC = 30Vdc ; IC = 25Adc; IB1 = -IB2 = 2.5Adc
toff
3.0
μs
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, t = 1.0s
Test 1
VCE = 6.0Vdc, IC = 50Adc
Test 2
VCE = 30Vdc, IC = 10Adc
Test 3
VCE = 50Vdc, IC = 560mAdc
VCE = 60Vdc, IC = 640mAdc
2N5685
2N5686
(2) Pulse Test: Pulse Width = 300s, Duty Cycle ≤ 2.0%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5686 | 50 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2N5738.MOD | 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N5738 | 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N5739 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-213AA |
| 2N5740 | 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-213AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5686 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N5686G | 功能描述:兩極晶體管 - BJT 50A 80V 300W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5686JTX | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
| 2N5686JTXV | 制造商: 功能描述: 制造商:MILITARY SPECIFICATIONS P 功能描述: |
| 2N5687 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-39 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。