參數(shù)資料
型號: 2N5686
廠商: MICROSEMI CORP-LAWRENCE
元件分類: 功率晶體管
英文描述: 50 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AE
封裝: TO-3, 2 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 120K
代理商: 2N5686
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/464
T4-LDS-0162 Rev. 1 (100546)
Page 1 of 3
DEVICES
LEVELS
2N5685
2N5686
JAN
JANTX
JANTV
Note:
1. Derate linearly 1.715 W/°C between TC = 25°C and TC = 200°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
(1)
Collector-Emitter Breakdown Voltage
IC = 100mAdc
2N5685
2N5686
V(BR)CEO
60
80
Vdc
Collector-Emitter Cutoff Current
VCE = 30Vdc
VCE = 40Vdc
2N5685
2N5686
ICEO
500
μAdc
Collector-Emitter Cutoff Current
VCE = 60Vdc, VBE = 1.5Vdc
VCE = 80Vdc, VBE = 1.5Vdc
2N5685
2N5686
ICEX
10
μAdc
Collector-Base Cutoff Current
VCE = 60Vdc
VCE = 80Vdc
2N5685
2N5686
ICBO
2.0
mAdc
Emitter-Base Cutoff Current
VEB = 5.0Vdc
IEBO
1.0
mAdc
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N5685
2N5686
Unit
Collector-Emitter Voltage
VCEO
60
80
Vdc
Collector-Base Voltage
VCBO
60
80
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Base Current
IB
15
Adc
Collector Current
IC
50
Adc
Total Power Dissipation
@ TC = +25°C
(1)
@ TC = +100°C
(1)
PT
300
171
300
171
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-55 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
.0584
°C/W
TO-3 (TO-204AE)
相關PDF資料
PDF描述
2N5686 50 A, 80 V, NPN, Si, POWER TRANSISTOR
2N5738.MOD 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA
2N5738 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA
2N5739 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-213AA
2N5740 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-213AA
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