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參數(shù)資料
| 型號： | 2N5684 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AE |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 270K |
| 代理商： | 2N5684 |
2N5684 2N5685 2N5686
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.02
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
2000
500
θJC(t) = r(t) θJC
θJC = 0.584°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.05
0.02
0.01
SINGLE PULSE
0.1
1000
0.2
100
1.0
Figure 5. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
50
20
10
5.0
0.1
2.0
3.0
7.0
10
20
30
50
100
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
70
2.0
I C
,COLLECT
OR
CURRENT
(AMP)
TJ = 200°C
CURVES APPLY BELOW
RATED VCEO
dc
1.0 ms
500
s
1.0
0.5
0.2
5.0
2N5683, 2N5685
100
s
5.0 ms
2N5684, 2N5686
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
4.0
0.5
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
2.0
1.0
0.6
0.4
0.2
0.7 1.0
2.0
3.0
7.0
20
50
TJ = 25°C
IB1 = IB2
IC/IB = 10
VCE = 30 V
0.3
t,
TIME
(
s)
ts
5.0
5000
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
500
2.0
5.0
10
20
100
50
0.2
0.5
1.0
C,
CAP
ACIT
ANCE
(pF)
3000
1000
700
TJ = 25°C
0.8
3.0
30
2000
10
2N5684 (PNP)
2N5685, 2N5686 (NPN)
tf
Cib
2N5684 (PNP)
2N5685, 2N5686 (NPN)
Cob
Cib
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| 2N5686 | 50 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2N5738.MOD | 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5684/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High-Current Complementary Silicon Power Transistors |
| 2N5684_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High−Current Complementary Silicon Power Transistors |
| 2N5684G | 功能描述:兩極晶體管 - BJT 50A 80V 300W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5684G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| 2N5685 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 50A 3PIN TO-3 - Bulk 制造商:Microsemi 功能描述:Microsemi 2N5685 GP BJTs 制造商:NTE Electronics 功能描述:TRANSISTOR BIPOLAR NPN 80V 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, NPN, 80V, 50A, TO-3 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, NPN, 80V, 50A, TO-3-2; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:300W; DC Collector Current:50A; DC Current Gain hFE:15; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
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