參數(shù)資料
型號(hào)： 2N5657
廠商： STMICROELECTRONICS
元件分類： 功率晶體管
英文描述： 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-126
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 2/5頁
文件大小： 497K
代理商： 2N5657
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
6.25
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCE = 375 V
0.01
mA
ICEV
Collector Cut-off
Current (VBE = -1.5V)
VCE = 350 V
VCE = 250 V
Tc = 100
oC
0.1
1
mA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 250 V
0.1
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 6 V
0.01
mA
V(BR)CEO
Collector-Emitter
Breakdown Voltage
IC = 1 mA
350
V
VCEO(sus)
Collector-Emitter
Sustaining Voltage
IC = 100 mA
L = 50 mH
350
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 0.1 A
IB = 10 mA
IC = 0.25 A
IB = 25 mA
IC = 0.5 A
IB = 0.1 A
1
2.5
10
V
VBE
Base-Emitter Voltage
IC = 0.1 A
VCE = 10 V
1
V
hFE
DC Current Gain
IC = 50 mA
VCE = 10 V
IC = 0.1 A
VCE = 10 V
IC = 0.25 A
VCE = 10 V
IC = 0.5 A
VCE = 10 V
25
30
15
5
250
hfe
Small Signal Current
Gain
IC = 0.1 A
VCE = 10 V
f = 1KHz
20
fT
Transition frequency
IC = 50 mA
VCE = 10 V
f =10MHz
10
MHz
CCBO
Collector Base
Capacitance
VCB = 10 V
f = 100KHz
25
pF
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area
Derating Curve
2N5657
2/5
相關(guān)PDF資料
PDF描述
2N5659 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-59
2N5659 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111
2N5659 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111
2N5730 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-59
2N5659 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5657G 功能描述:兩極晶體管 - BJT 1A 250V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5658 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 10A 3PIN TO-59 - Bulk
2N5659 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 10A 3PIN TO-111 - Bulk 制造商: 功能描述:Bipolar Junction Transistor, NPN Type, TO-111 制造商:GENERAL 功能描述:Bipolar Junction Transistor, NPN Type, TO-111 制造商:NJS 功能描述:Bipolar Junction Transistor, NPN Type, TO-111
2N5660 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 2A 3PIN TO-66 - Bulk
2N5661 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 2A 3PIN TO-66 - Bulk 制造商:Rochester Electronics LLC 功能描述:NPN TRANSISTOR TO-66 LAW - Bulk
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