參數(shù)資料
型號(hào): 2N5564
廠商: Vishay Intertechnology,Inc.
英文描述: Matched N-Channel JFET Pairs(最小柵源擊穿電壓-40V,柵極工作電流-3pA的N溝道結(jié)型場(chǎng)效應(yīng)管)
中文描述: 匹配N溝道場(chǎng)效應(yīng)對(duì)(最小柵源擊穿電壓- 40V的,柵極工作電流,3pA的N溝道結(jié)型場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 47K
代理商: 2N5564
2N5564/5565/5566
Siliconix
P-37406—Rev. C, 25-Jul-94
3
Typical Characteristics
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
100
r
DS
@ I
D
= 1 mA, V
GS
= 0
I
DSS
@ V
DS
= 15 V, V
GS
= 0
80
On-Resistance vs. Drain Current
0
–10
0
200
160
0
I
D
r
DS
I
DSS
100
0
1
10
100
V
GS(off)
= –2 V
T
A
= 25 C
V
GS(off)
– Gate-Source Cutoff Voltage (V)
I
D
– Drain Current (mA)
60
40
20
80
60
40
20
–2
–4
–6
–8
120
80
40
Turn-On Switching
5
0
–10
4
3
2
1
0
t
r
S
t
d(on)
@
I
D
= 3 mA
t
d(on)
@
I
D
= 12 mA
t
r
approximately independent of I
D
V
DG
= 5 V, R
G
= 50
V
GSL
= –10 V
V
GS(off)
– Gate-Source Cutoff Voltage (V)
–2
–4
–6
–8
Turn-Off Switching
30
0
10
24
18
12
6
0
V
GS(off)
= –2 V
t
d(off)
t
d(off)
independent of device V
GS(off)
V
DG
= 5 V, V
GSL
= –10 V
I
D
– Drain Current (mA)
2
4
6
8
S
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
50
g
fs
and g
os
@ V
DS
= 15 V
V
GS
= 0 V, f = 1 kHz
40
0
0
–2
–10
500
200
0
g
f
g
fs
g
os
V
GS(off)
– Gate-Source Cutoff Voltage (V)
30
20
10
–4
–6
–8
400
200
100
160
120
On-Resistance vs. Temperature
200
–55
25
125
0
–15
85
I
D
= 1 mA
r
DS
changes
0.7%/ C
V
GS(off)
= –2 V
T
A
– Temperature ( C)
80
40
–35
5
45
65
105
t
f
r
D
)
r
D
)
r
D
)
S
g
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PDF描述
2N5565 Matched N-Channel JFET Pairs(最小柵源擊穿電壓-40V,柵極工作電流-3pA的N溝道結(jié)型場(chǎng)效應(yīng)管)
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2N5565 功能描述:JFET 40V 5mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時(shí)的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
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