參數(shù)資料
型號： 2N5564
廠商： Vishay Intertechnology,Inc.
英文描述： Matched N-Channel JFET Pairs(最小柵源擊穿電壓-40V，柵極工作電流-3pA的N溝道結(jié)型場效應(yīng)管)
中文描述： 匹配N溝道場效應(yīng)對（最小柵源擊穿電壓- 40V的，柵極工作電流，3pA的N溝道結(jié)型場效應(yīng)管）
文件頁數(shù)： 2/5頁
文件大小： 47K
代理商： 2N5564
2N5564/5565/5566
2
Siliconix
P-37406—Rev. C, 25-Jul-94
Specifications
a
Limits
2N5564
2N5565
2N5566
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A, V
DS
= 0 V
–55
–40
–40
–40
V
Gate-Source
Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 1 nA
–2
–0.5
–3
–0.5
–3
–0.5
–3
Saturation Drain
Current
c
I
DSS
V
DS
= 15 V, V
GS
= 0 V
20
5
30
5
30
5
30
mA
Gate Reverse Current
I
GSS
V
GS
= –20 V, V
DS
= 0 V
–5
–100
–100
–100
pA
T
A
= 150 C
–10
–200
–200
–200
nA
Gate Operating Current
d
I
G
V
DG
= 15 V, I
D
= 2 mA
–3
pA
T
A
= 125 C
–1
nA
Drain-Source
On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 1 mA
50
100
100
100
Gate-Source Voltage
d
V
GS
V
DG
= 15 V, I
D
= 2 mA
–1.2
Gate-Source
Forward Voltage
V
GS(F)
I
G
= 2 mA , V
DS
= 0 V
0.7
1
1
1
V
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= 15 V, I
D
= 2 mA
f = 1 kHz
9
7.5
12.5
7.5
12.5
7.5
12.5
mS
Common-Source
Output Conductance
g
os
35
45
45
45
S
Common-Source
Forward Transconductance
g
fs
V
DS
= 15 V, I
D
= 2 mA
f = 100 MHz
8.5
7
7
7
mS
Common-Source
Input Capacitance
C
iss
= 15 V I
V
DS
= 15 V, I
D
= 2 mA
f = 1 MHz
10
12
12
12
Common-Source
Reverse Transfer
Capacitance
C
rss
2.5
3
3
3
pF
Equivalent Input
Noise Voltage
e
n
V
DS
= 15 V, I
D
= 2 mA
f = 10 Hz
12
50
50
50
nV
√
Hz
Noise Figure
NF
R
G
= 10 M
1
1
1
dB
Matching
Differential
Gate-Source Voltage
|V
GS1
–V
GS2
|
V
DG
= 15 V, I
D
= 2 mA
5
10
20
mV
Gate-Source Voltage
Differential Change
with Temperature
|V
GS1
–V
GS2
|
T
V
DG
= 15 V, I
D
= 2 mA
T
A
= –55 to 125 C
10
25
50
V/
C
Saturation Drain
Current Ratio
d
I
DSS1
I
DSS2
V
DS
= 15 V, V
GS
= 0 V
0.98
0.95
1
0.95
1
0.95
1
Transconductance Ratio
V
DS
= 15 V, I
D
= 2 mA
f = 1 kHz
0.98
0.95
1
1
1
Common Mode
Rejection Ratio
d
CMRR
V
DG
= 10 to 20 V
I
D
= 2 mA
76
dB
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
This parameter not registered with JEDEC.
NCBD
相關(guān)PDF資料
PDF描述
2N5565 Matched N-Channel JFET Pairs(最小柵源擊穿電壓-40V，柵極工作電流-3pA的N溝道結(jié)型場效應(yīng)管)
2N5566 Matched N-Channel JFET Pairs(最小柵源擊穿電壓-40V，柵極工作電流-3pA的N溝道結(jié)型場效應(yīng)管)
2N5633 SILICON POWER TRANSISTOR
2N5634 SILICON POWER TRANSISTOR
2N6229 SILICON POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5564-2 制造商:Vishay Angstrohm 功能描述:Trans JFET N-CH 6-Pin TO-71 T/R 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 6PIN TO-71 - Bulk
2N5564-E3 功能描述:JFET 40V 5mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N5565 功能描述:JFET 40V 5mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N5565-2 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 6PIN TO-71 - Bulk
2N5565-E3 功能描述:JFET 40V 5mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*