參數(shù)資料
型號: 2N5457
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: N-Channel Depletion JFET(通用N溝道耗盡型結(jié)型場效應(yīng)管)
中文描述: 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
封裝: PLASTIC, CASE 29-11, TO-226, 3 PIN
文件頁數(shù): 2/6頁
文件大小: 57K
代理商: 2N5457
2N5457, 2N5458
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate- Source Breakdown Voltage
(I
G
= -10 Adc, V
DS
= 0)
(V
GS
= -15 Vdc, V
DS
= 0)
(V
GS
= -15 Vdc, V
DS
= 0, T
A
= 100
°
C)
V
(BR)GSS
I
GSS
-25
-
-
Vdc
Gate Reverse Current
-
-
-
-
1.0
-200
nAdc
Gate-Source Cutoff Voltage
(V
DS
= 15 Vdc, i
D
= 10 nAdc)
2N5457
2N5458
V
GS(off)
-0.5
-1.0
-
-
-6.0
-7.0
Vdc
Gate-Source Voltage
(V
DS
= 15 Vdc, i
D
= 100 Adc)
(V
DS
= 15 Vdc, i
D
= 200 Adc)
2N5457
2N5458
V
GS
-
-
-2.5
-3.5
-
-
Vdc
ON CHARACTERISTICS
Zero-Gate-V oltage Drain Current (Note 1)
(V
DS
= 15 Vdc, V
GS
= 0)
2N5457
2N5458
I
DSS
1.0
2.0
3.0
6.0
5.0
9.0
mAdc
DYNAMIC CHARACTERISTICS
Forward Transfer Admittance (Note 1)
(V
DS
= 15 Vdc, V
GS
= 0, f = 1 kHz)
2N5457
2N5458
|Y
fs
|
1000
1500
3000
4000
5000
5500
mhos
Output Admittance Common Source (Note 1) (V
DS
= 15 Vdc, V
GS
= 0, f = 1 kHz)
Input Capacitance
|Y
os
|
C
iss
C
rss
-
10
50
mhos
(V
DS
= 15 Vdc, V
GS
= 0, f = 1 kHz)
(V
DS
= 15 Vdc, V
GS
= 0, f = 1 kHz)
-
4.5
7.0
pF
Reverse Transfer Capacitance
1. Pulse Width
630 ms, Duty Cycle
10%.
-
1.5
3.0
pF
相關(guān)PDF資料
PDF描述
2N5457 N-Channel General Purpose Amplifier(N溝道通用放大器)
2N5458 N-Channel General Purpose Amplifier(N溝道通用放大器)
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2N5458 JFETs - General Purpose(通用關(guān)聯(lián)場效應(yīng)管)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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