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參數(shù)資料
| 型號： | 2N5458 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | JFETs - General Purpose(通用關(guān)聯(lián)場效應(yīng)管) |
| 中文描述： | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封裝： | PLASTIC, CASE 29-11, TO-226, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 56K |
| 代理商： | 2N5458 |
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 5
1
Publication Order Number:
2N5457/D
2N5457, 2N5458
Preferred Device
JFETs General Purpose
NChannel Depletion
NChannel Junction Field Effect Transistors, depletion mode
(Type A) designed for audio and switching applications.
Features
NChannel for Higher Gain
Drain and Source Interchangeable
High AC Input Impedance
High DC Input Resistance
Low Transfer and Input Capacitance
Low CrossModulation and Intermodulation Distortion
Unibloc Plastic Encapsulated Package
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DS
25
Vdc
DrainGate Voltage
V
DG
25
Vdc
Reverse GateSource Voltage
V
GSR
25
Vdc
Gate Current
I
G
10
mAdc
Total Device Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
310
2.82
mW
mW/
°
C
Operating Junction Temperature
T
J
135
°
C
Storage Temperature Range
T
stg
65 to +150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
2N5457
TO92
1000 Units/Box
Preferred
devices are recommended choices for future use
and best overall value.
2N5458
TO92
1000 Units/Box
http://onsemi.com
1 DRAIN
2 SOURCE
3
GATE
2N5458G
TO92
(PbFree)
1000 Units/Box
2N5457G
TO92
(PbFree)
1000 Units/Box
MARKING
DIAGRAM
TO92
CASE 29
STYLE 5
123
2N
545x
AYWW
2N545x = Device Code
x = 7 or 8
A
= Assembly Location
Y
= Year
WW
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5460 | P-Channel Depletion JFET Amplifier(P溝道耗盡型結(jié)型場效應(yīng)管放大器) |
| 2N5461 | P-Channel Depletion JFET Amplifier(P溝道耗盡型結(jié)型場效應(yīng)管放大器) |
| 2N5462 | P-Channel Depletion JFET Amplifier(P溝道耗盡型結(jié)型場效應(yīng)管放大器) |
| 2N5460 | P-Channel General Purpose Amplifier(P溝道通用放大器) |
| 2N5461 | P-Channel General Purpose Amplifier(P溝道通用放大器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5458 | 制造商:Fairchild Semiconductor Corporation 功能描述:RF JFET |
| 2N5458_D26Z | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5458_D27Z | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5458_Q | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5458A | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:N-CHANNEL JFET |
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