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參數(shù)資料
| 型號(hào)： | 2N5194 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP Power Transistor(4A,40W,60V（集電極-發(fā)射極）,硅PNP功率晶體管) |
| 中文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 封裝： | CASE 77-09, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 99K |
| 代理商： | 2N5194 |
2N5194 2N5195
http://onsemi.com
4
2.0
0.05
Figure 9. Turn–On Time
I
C
, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.02
0.07 0.1
0.2
0.3
1.0
2.0
4.0
t
r
@ V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25
°
C
0.03
t
0.5
0.05
0.7
3.0
t
r
@ V
CC
= 10 V
t
d
@ V
BE(off)
= 2.0 V
2.0
0.05
Figure 10. Turn–Off Time
I
C
, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.02
0.07 0.1
0.2
0.3
1.0
2.0
4.0
t
f
@ V
CC
= 30 V
I
B1
= I
B2
I
C
/I
B
= 10
t
s
′
= t
s
- 1/8 t
f
T
J
= 25
°
C
0.03
t
0.5
0.05
0.7
3.0
t
f
@ V
CC
= 10 V
t
s
′
10
1.0
Figure 11. Rating and Thermal Data
Active–Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.1
2.0
5.0
10
20
50
100
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ T
C
= 25
°
C
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED V
CEO
0.2
I
T
J
= 150
°
C
2N5194
dc
5.0 ms
1.0 ms
100
μ
s
2N5195
Note 1:
There are two limitations on the power handling ability of
a transistor; average junction temperature and second
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on T
J(pk)
= 150 C. T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150 C. At high–case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
Figure 12. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.7
0.5
0.010.01
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r
T
0.05
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
20
30
50
100
200 300
1000
500
θ
JC(max)
= 3.12
°
C/W
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2N5194/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon PNP Power Transistors |
| 2N5194_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon PNP Power Transistors |
| 2N5194G | 功能描述:兩極晶體管 - BJT 4A 60V 40W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5194G | 制造商:ON Semiconductor 功能描述:RF Bipolar Transistor |
| 2N5195 | 功能描述:兩極晶體管 - BJT PNP Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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