參數(shù)資料
型號: 2N5116-TO-18
廠商: LINEAR INTEGRATED SYSTEMS INC
元件分類: 小信號晶體管
英文描述: P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18
封裝: TO-18, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 328K
代理商: 2N5116-TO-18
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5114
LOW ON RESISTANCE
75
LOW CAPACITANCE
6pF
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 200°C
Junction Operating Temperature
-55 to 200°C
Maximum Power Dissipation
Continuous Power Dissipation
500mW
Maximum Currents
Gate Current
-50mA
Maximum Voltages
Gate to Drain
30V
Gate to Source
30V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
2N5114
2N5115
2N5116
SYM.
CHARACTERISTIC
TYP
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
CONDITIONS
BVGSS
Gate to Source Breakdown Voltage
30
IG = 1A, VDS = 0V
VGS(off)
Gate to Source Cutoff Voltage
5
10
3
6
1
4
VDS = -15V, ID = -1nA
VGS(F)
Gate to Source Forward Voltage
-0.7
-1
IG = -1mA, VDS = 0V
-1.0
-1.3
VGS = 0V, ID = -15mA
-0.7
-0.8
VGS = 0V, ID = -7mA
VDS(on)
Drain to Source On Voltage
-0.5
-0.6
V
VGS = 0V, ID = -3mA
-30
-90
VDS = -18V, VGS = 0V
IDSS
Drain to Source Saturation Current
2
-15
-60
-5
-25
mA
VDS = -15V, VGS = 0V
IGSS
Gate Leakage Current
5
500
VGS = 20V, VDS = 0V
IG
Gate Operating Current
-5
VDG = -15V, ID = -1mA
-10
-500
VDS = -15V, VGS = 12V
-10
-500
VDS = -15V, VGS = 7V
ID(off)
Drain Cutoff Current
-10
-500
pA
VDS = -15V, VGS = 5V
rDS(on)
Drain to Source On Resistance
75
100
150
VGS = 0V, ID = -1mA
G
S
D
2
1
3
BOTTOM VIEW
TO-18
Linear Integrated Systems
2N5114 SERIES
SINGLE P-CHANNEL JFET
Linear Integrated Systems 4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
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