- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33261 > 2N5114-TO-18 (LINEAR INTEGRATED SYSTEMS INC) P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 PDF資料下載
參數(shù)資料
| 型號： | 2N5114-TO-18 |
| 廠商： | LINEAR INTEGRATED SYSTEMS INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
| 封裝： | TO-18, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 328K |
| 代理商： | 2N5114-TO-18 |
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5114
LOW ON RESISTANCE
75
LOW CAPACITANCE
6pF
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 200°C
Junction Operating Temperature
-55 to 200°C
Maximum Power Dissipation
Continuous Power Dissipation
500mW
Maximum Currents
Gate Current
-50mA
Maximum Voltages
Gate to Drain
30V
Gate to Source
30V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
2N5114
2N5115
2N5116
SYM.
CHARACTERISTIC
TYP
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
CONDITIONS
BVGSS
Gate to Source Breakdown Voltage
30
IG = 1A, VDS = 0V
VGS(off)
Gate to Source Cutoff Voltage
5
10
3
6
1
4
VDS = -15V, ID = -1nA
VGS(F)
Gate to Source Forward Voltage
-0.7
-1
IG = -1mA, VDS = 0V
-1.0
-1.3
VGS = 0V, ID = -15mA
-0.7
-0.8
VGS = 0V, ID = -7mA
VDS(on)
Drain to Source On Voltage
-0.5
-0.6
V
VGS = 0V, ID = -3mA
-30
-90
VDS = -18V, VGS = 0V
IDSS
Drain to Source Saturation Current
2
-15
-60
-5
-25
mA
VDS = -15V, VGS = 0V
IGSS
Gate Leakage Current
5
500
VGS = 20V, VDS = 0V
IG
Gate Operating Current
-5
VDG = -15V, ID = -1mA
-10
-500
VDS = -15V, VGS = 12V
-10
-500
VDS = -15V, VGS = 7V
ID(off)
Drain Cutoff Current
-10
-500
pA
VDS = -15V, VGS = 5V
rDS(on)
Drain to Source On Resistance
75
100
150
VGS = 0V, ID = -1mA
G
S
D
2
1
3
BOTTOM VIEW
TO-18
Linear Integrated Systems
2N5114 SERIES
SINGLE P-CHANNEL JFET
Linear Integrated Systems 4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5116 | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
| 2N5135 | 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-105 |
| 2N3565 | 50 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5135 | 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-105 |
| 2N2910 | 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-77 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5114UB | 制造商:Microsemi Corporation 功能描述:TRANS JFET P-CH 30V 3PIN TO-18 - Gel-pak, waffle pack, wafer, diced wafer on film |
| 2N5115 | 功能描述:JFET 30V 10pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5115_TO-18 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:P-CHANNEL JFET |
| 2N5115E3 | 制造商:Microsemi Corporation 功能描述:TRANS JFET P-CH 30V 3PIN TO-18 - Gel-pak, waffle pack, wafer, diced wafer on film |
| 2N5115-E3 | 功能描述:JFET 30V 10pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。