參數(shù)資料
型號： 2N5109
廠商： SEMICOA CORP
元件分類： 小信號晶體管
英文描述： UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
封裝： HERMETIC SEALED, METAL CAN-3
文件頁數(shù)： 2/2頁
文件大?。?/td> 198K
代理商： 2N5109
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N5109
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 100 A
40
Volts
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 5 mA
20
Volts
Collector-Emitter Breakdown Voltage
V(BR)CER
IC = 5 mA, RBE = 10
40
Volts
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 100 A
3
Volts
Collector-Emitter Cutoff Current
ICEO1
ICEO2
VCE = 15 Volts
VCE = 15 Volts, TA = 175°C
20
5
A
mA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
IC = 50 mA, VCE = 15 Volts
IC = 50 mA, VCE = 5 Volts
TA = -55°C
40
15
150
Collector-Emitter Saturation Voltage
VCEsat
IC = 100 mA, IB = 10 mA
0.5
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE1|
|hFE2|
|hFE3|
VCE = 15 Volts, f = 200 MHz,
IC = 25 mA
IC = 50 mA
IC = 100 mA
5
6
5
10.0
11.0
10.5
Open Circuit Output Capacitance
COBO
VCB = 5 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
3.5
pF
Power Gain (narrow band) current
GPE
VCC = 15 Volts, IC = 50 mA,
f = 200 MHz, Pin = -10 dB
11
dB
Cross Modulation
cm
VCC = 15 Volts, IC = 50 mA,
54 dB output
-57
dB
Noise Figure
NF
VCC = 15 Volts, IC = 10 mA,
f = 200 MHz, Pin = -10 dB
3.5
dB
Voltage Gain (wideband)
G
VCC = 15 Volts, IC = 50 mA,
50 MHz < f < 216 MHz,
Pin = -10dB
11
dB
相關(guān)PDF資料
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