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參數(shù)資料
| 型號(hào)： | 2N5011 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 600 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | TO-5, 3 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | 2N5011 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0067 Rev. 2 (100293)
Page 3 of 4
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Cont.)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Base-Emitter Saturation Voltage
IC = 25mA
IC = 20mA
IB = 5mA, Pulsed
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
VBE(SAT)
1.0
Vdc
Collector-Emitter Saturation Voltage
IC = 25mA
IC = 20mA
IB = 5mA, Pulsed
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
VCE(SAT)
1.4
1.5
1.6
1.8
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of small signal short-circuit forward current transfer ratio
VCE = 10Vdc, IC = 25mA, f = 10MHz
VCE = 10Vdc, IC = 20mA, f = 10MHz
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
|hfe|
1.0
Open circuit output capacitance
VCB = 10V, IE = 0, f = 2MHz
Cobo
30
pF
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| 2N5012 | Si, SMALL SIGNAL TRANSISTOR, TO-39 |
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| 2N1714 | 0.75 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-39 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5011S | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR |
| 2N5012 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 0.5A 3PIN TO-5 - Bulk |
| 2N5012S | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR |
| 2N5013 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 0.5A 3PIN TO-5 - Bulk |
| 2N5013S | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR |
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