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參數(shù)資料
| 型號： | 2N5011 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 600 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | TO-5, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 2N5011 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0067 Rev. 2 (100293)
Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector to Base Cutoff Current
VCB = 400V
VCB = 500V
VCB = 580V
VCB = 650V
VCB = 700V
VCB = 760V
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
ICBO1
10
nAdc
@ TA = +150°C
VCB = 400V
VCB = 500V
VCB = 588V
VCB = 650V
VCB = 700V
VCB = 760V
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
ICBO2
10
uAdc
Emitter to Base Cutoff Current
VEB = 4V
IEBO
20
uAdc
Collector to Base Breakdown Voltage
IC = 0.1mAdc
IC = 0.2mAdc
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
V(BR)CBO
500
600
700
800
900
1000
Vdc
Emitter to Base Breakdown Voltage
IC = 0mA
IE = 0.05mA
V(BR)EBO
5
Vdc
Collector to Emitter Breakdown Voltage
RBE = 1KΩ
IC = 0.2mA, Pulsed
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
V(BR)CER
500
600
700
800
900
1000
Vdc
Forward-Current Transfer Ratio
IC = 25mA
IC = 20mA
VCE = 10V
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
hFE1
30
180
VCE = 10V
IC = 5mA
hFE2
10
VCE = 10V
IC = 20mA
@ TA = -55°C
hFE3
10
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| 2N5012 | Si, SMALL SIGNAL TRANSISTOR, TO-39 |
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| 2N1714 | 0.75 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-39 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5011S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR |
| 2N5012 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 0.5A 3PIN TO-5 - Bulk |
| 2N5012S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR |
| 2N5013 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 0.5A 3PIN TO-5 - Bulk |
| 2N5013S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR |
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