參數(shù)資料
型號(hào): 2N4923
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 238K
代理商: 2N4923
2N4921 thru 2N4923
4
Motorola Bipolar Power Transistor Device Data
V
CE
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
R
BE
,EXTERNAL
BASE–EMITTER
RESIST
ANCE
(OHMS)
1000
2.0
Figure 8. Current Gain
IC, COLLECTOR CURRENT (mA)
10
3.0 5.0
10
20 30
200 300 500
2000
500
200
100
70
Figure 9. Collector Saturation Region
1.0
0.2
IB, BASE CURRENT (mA)
0
0.3
0.5
1.0
2.0
5.0
10
20
50
200
0.8
0.6
0.4
0.2
IC = 0.1 A
TJ = 25°C
0.25 A
0.5 A
1.0 A
700
300
h
FE
,DC
CURRENT
GAIN
TJ = 150°C
25
°C
– 55
°C
VCE = 1.0 V
50
30
20
50
100
1000
3.0
30
100
108
0
Figure 10. Effects of Base–Emitter Resistance
TJ, JUNCTION TEMPERATURE (°C)
30
60
90
120
150
107
105
104
103
VCE = 30 V
IC = 10 x ICES
IC = 2 x ICES
IC ≈ ICES
ICES VALUES
OBTAINED FROM
FIGURE 12
106
1.5
2.0
IC, COLLECTOR CURRENT (mA)
5.0
10
20 30
50
100 200 300
2000
1.2
0.9
0.6
0.3
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOL
TAGE
(VOL
TS)
Figure 11. “On” Voltage
3.0
500
1000
VBE @ VCE = 2.0 V
104
– 0.2
Figure 12. Collector Cut–Off Region
VBE, BASE–EMITTER VOLTAGE (VOLTS)
103
102
10–1
,COLLECT
OR
CURRENT
(
A)
I C
– 0.1
0
+ 0.1
+ 0.2
+ 0.3
+ 0.4
+ 0.5
VCE = 30 V
TJ = 150°C
100
°C
25
°C
REVERSE
FORWARD
IC = ICES
+ 2.5
2.0
Figure 13. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
3.0 5.0
10
20 30
50
100 200
2000
– 55
°C to +100°C
TEMPERA
TURE
COEFFICIENTS
(mV/
C)° +2.0
+ 1.5
+ 0.5
0
– 0.5
– 1.0
– 1.5
– 2.0
– 2.5
θVB FOR VBE
TJ = 100°C to 150°C
*APPLIES FOR IC/IB ≤
hFE @ VCE + 1.0 V
2
+ 1.0
300 500
1000
101
100
10– 2
*
θVC FOR VCE(sat)
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