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參數(shù)資料
| 型號(hào)： | 2N4923 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 238K |
| 代理商： | 2N4923 |
1
Motorola Bipolar Power Transistor Device Data
Medium-Power Plastic NPN
Silicon Transistors
. . . designed for driver circuits, switching, and amplifier applications. These
high–performance plastic devices feature:
Low Saturation Voltage — VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
Excellent Power Dissipation Due to Thermopad Construction —
PD = 30 W @ TC = 25_C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 Amp
Complement to PNP 2N4918, 2N4919, 2N4920
*MAXIMUM RATINGS
Rating
Symbol
2N4921
2N4922
2N4923
Unit
Collector–Emitter Voltage
VCEO
40
60
80
Vdc
Collector–Base Voltage
VCB
40
60
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous (1)
IC
1.0
3.0
Adc
Base Current — Continuous
IB
1.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
30
0.24
Watts
W/
_C
Operating & Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS (2)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
4.16
_C/W
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current handling capability of the
device (see Figures 5 and 6)
(2) Recommend use of thermal compound for lowest thermal resistance.
* Indicates JEDEC Registered Data.
40
30
20
10
0
25
50
75
100
125
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N4921/D
Motorola, Inc. 1995
2N4921
thru
2N4923
*Motorola Preferred Device
1 AMPERE
GENERAL–PURPOSE
POWER TRANSISTORS
40 – 80 VOLTS
30 WATTS
*
CASE 77–08
TO–225AA TYPE
REV 7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4923 | 制造商:ON Semiconductor 功能描述:TRANSISTOR NPN TO-126 |
| 2N4923G | 功能描述:兩極晶體管 - BJT 3A 80V 30W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4923NSC | 制造商:National Semiconductor 功能描述:2N4923 |
| 2N4924 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 2N4925 | 制造商:Solid State Devices Inc (SSDI) 功能描述:NPN Silicon Transistor TO-39 |
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