參數(shù)資料
型號: 2N4920
廠商: MICRO COMMERCIAL COMPONENTS
元件分類: 功率晶體管
英文描述: 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 5/6頁
文件大小: 490K
代理商: 2N4920
-0.2
102
Figure 12. Collector Cut–Off Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
101
100
10-1
,COLLECT
OR
CURRENT
(A)
I C
10-2
103
-0.1
0
+0.1
+0.2
+0.3
+0.4
+0.5
VCE = 30 V
TJ = 150°C
100°C
25°C
FORWARD
IC = ICES
104
+2.5
2.0
Figure 13. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
3.0 5.0
10
20 30 50
100 200
2000
TJ = -55°C to +100°C
TEMPERA
TURE
COEFFICIENTS
(mV/
C)° +2.0
+1.5
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
θVB FOR VBE
*θVC FOR VCE(sat)
TJ = 100°C to 150°C
*APPLIES FOR IC/IB <
hFE @VCE + 1.0V
2
+1.0
300 500 1000
REVERSE
R BE
,EXTERNAL
BASE-EMITTER
RESIST
ANCE
(OHMS)
108
0
Figure 10. Effects of Base–Emitter Resistance
TJ, JUNCTION TEMPERATURE (°C)
30
60
90
120
150
107
105
104
103
VCE = 30 V
IC = 10 ICES
IC = 2x ICES
IC ≈ ICES
ICES VALUES
OBTAINED FROM
FIGURE 13
106
1.5
2.0
IC, COLLECTOR CURRENT (mA)
5.0
10
20 30 50
100 200 300
2000
1.2
0.9
0.6
0.3
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOL
TAGE
(VOL
TS)
Figure 11. “On” Voltage
3.0
500 1000
VBE @ VCE = 2.0 V
MCC
2N4920
Revision: 3
2006/05/17
TM
Micro Commercial Components
www.mccsemi.com
5 of 6
相關(guān)PDF資料
PDF描述
2N4920 1 A, 80 V, PNP, Si, POWER TRANSISTOR
2N3741 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-66
2N5679 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N3634 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N4922 1 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N4920 制造商:ON Semiconductor 功能描述:TRANSISTOR PNP TO-126 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR PNP -80V
2N4920G 功能描述:兩極晶體管 - BJT 3A 80V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4921 功能描述:兩極晶體管 - BJT 3A 40V 30W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4921/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Medium-Power Plastic NPN Silicon Transistors
2N4921_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Medium−Power Plastic NPN Silicon Transistors