參數(shù)資料
型號(hào)： 2N4920
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 功率晶體管
英文描述： 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 490K
代理商： 2N4920
2N4920
PNP General
Purpose Power
Transistors
Features
Designed for driver circuits, switching, and amplifier applications.
These high-performance plastic devices feature.
Medium-Power Plastic PNP Silicon Transistors.
Low Saturation Voltage: VCE(sat)=0.6V(Max) @ IC=1.0A
Excellent Power Dissipation Due to Thermopad Construction:
PD=30W @ TC=25
OC
Marking:2N4920
Gain Specified to IC=1.0A
Maximum Ratings*
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
80
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current, Continuous
(1)
1.0
3.0
A
IB
Base Current
1.0
A
PD
Total Device Dissipation
Derate above 25
OC
30
0.24
W
W/
OC
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics(2)
Symbol
Rating
Max
Unit
RJC
Thermal Resistance, Junction to Case
4.16
OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
VCEO(sus)
Collector-Emitter Breakdown Voltage
(3)
(IC=0.1Adc, IB=0)
80
---
Vdc
ICEO
Collector Cutoff Current
(VCE=40Vdc, IB=0)
---
0.5
mAdc
ICEX
Collector Cutoff Current
(VCE=Rated VCEO, VEB(off)=1.5Vdc)
---
0.1
mAdc
ICBO
Collector Cutoff Current
(VCB=Rated VCEO, IE=0)
---
0.1
mAdc
IEBO
Emitter Cutoff Current
(VBE=5.0Vdc, IC=0)
---
1.0
mAdc
* Indicates JEDEC Registered Data for 2N4918 Series
(1) The 1.0A maximum IC value is based upon JEDEC current gain requirements.
The 3.0A maximum value is based upon actual current-handling capability of
the device.
(2) Recommend use of thermal compound for lowest thermal resistance.
(3) Pulse Test: PW=300us, Duty Cycle=2.0%