參數(shù)資料
型號(hào)： 2N4339
廠商： VISHAY SILICONIX
元件分類： 小信號(hào)晶體管
英文描述： N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA
封裝： HERMETIC SEALED, TO-18, 3 PIN
文件頁數(shù)： 1/7頁
文件大?。?/td> 75K
代理商： 2N4339
2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-40990—Rev. F, 24-May-04
www.vishay.com
1
N-Channel JFETs
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
IDSS Max (mA)
2N4338
0.3 to 1
50
0.6
2N4339
0.6 to 1.8
50
0.8
1.5
2N4340
1 to 3
50
1.3
3.6
2N4341
2 to 6
50
2
9
FEATURES
BENEFITS
APPLICATIONS
D Low Cutoff Voltage: 2N4338 <1 V
D High Input Impedance
D Very Low Noise
D High Gain: AV = 80 @ 20 mA
D Full Performance from Low-Voltage
Power Supply: Down to 1 V
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Amplification
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Infrared Detector Amplifiers
D Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N4338/4339/4340/4341 n-channel JFETs are designed
for sensitive amplifier stages at low- to mid-frequencies. Low
cut-off voltages accommodate low-level power supplies and
low leakage for improved system accuracy.
The TO-206AA (TO-18) package is hermetically sealed and
suitable for military processing (see Military Information). For
similar products in TO-226AA (TO-92) and TO-236 (SOT-23)
packages, see the J/SST201 series data sheet.
D
S
G and Case
TO-206AA
(TO-18)
Top View
1
23
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage
50 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
65 to 200_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
55 to 175_C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.)
300_C
. . . . . . . . . . . . . . . . . . .
Power Dissipationa
300 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2 mW/_C above 25_C
For applications information see AN102 and AN106.
相關(guān)PDF資料
PDF描述
2N4347 5 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-3
2N4352 30 mA, 25 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
2N4356 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-222AB
2N4356 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-222AB
2N4356 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-222AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N4339-2 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 3PIN TO-18 - Bulk
2N4339-E3 功能描述:JFET 50V 1.5mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N4340 功能描述:JFET Gen Purp JFET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N4340-E3 功能描述:JFET 50V 3.6mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N4341 功能描述:JFET N-Channel JFet General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
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