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參數(shù)資料
| 型號： | 2N4123RL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 2/24頁 |
| 文件大小： | 350K |
| 代理商： | 2N4123RL |
Packaging Specifications
6–6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL
H2A
H
F1
F2
P2
P1
P
D
W
W1
L1
W2
H2B
T1
T
T2
H4 H5
H1
Figure 1. Device Positioning on Tape
L
Specification
Inches
Millimeter
Symbol
Item
Min
Max
Min
Max
D
Tape Feedhole Diameter
0.1496
0.1653
3.8
4.2
D2
Component Lead Thickness Dimension
0.015
0.020
0.38
0.51
F1, F2
Component Lead Pitch
0.0945
0.110
2.4
2.8
H
Bottom of Component to Seating Plane
.059
.156
1.5
4.0
H1
Feedhole Location
0.3346
0.3741
8.5
9.5
H2A
Deflection Left or Right
0
0.039
0
1.0
H2B
Deflection Front or Rear
0
0.051
0
1.0
H4
Feedhole to Bottom of Component
0.7086
0.768
18
19.5
H5
Feedhole to Seating Plane
0.610
0.649
15.5
16.5
L
Defective Unit Clipped Dimension
0.3346
0.433
8.5
11
L1
Lead Wire Enclosure
0.09842
—
2.5
—
P
Feedhole Pitch
0.4921
0.5079
12.5
12.9
P1
Feedhole Center to Center Lead
0.2342
0.2658
5.95
6.75
P2
First Lead Spacing Dimension
0.1397
0.1556
3.55
3.95
T
Adhesive Tape Thickness
0.06
0.08
0.15
0.20
T1
Overall Taped Package Thickness
—
0.0567
—
1.44
T2
Carrier Strip Thickness
0.014
0.027
0.35
0.65
W
Carrier Strip Width
0.6889
0.7481
17.5
19
W1
Adhesive Tape Width
0.2165
0.2841
5.5
6.3
W2
Adhesive Tape Position
.0059
0.01968
.15
0.5
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements established in Figures 5, 6 and 7.
4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4123RLRM | 功能描述:兩極晶體管 - BJT 200mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4123TA | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4123TAR | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4123TAR_Q | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4123TF | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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