參數(shù)資料
型號: 2N3906J18Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: TO-92, 3 PIN
文件頁數(shù): 9/16頁
文件大?。?/td> 879K
代理商: 2N3906J18Z
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
5.0
V
IBL
Base Cutoff Current
VCE = 30 V, VBE = 3.0 V
50
nA
ICEX
Collector Cutoff Current
VCE = 30 V, VBE = 3.0 V
50
nA
hFE
DC Current Gain *
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
60
80
100
60
30
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.25
0.4
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.65
0.85
0.95
V
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
250
MHz
Cobo
Output Capacitance
VCB = 5.0 V, IE = 0,
f = 100 kHz
4.5
pF
Cibo
Input Capacitance
VEB = 0.5 V, IC = 0,
f = 100 kHz
10.0
pF
NF
Noise Figure
IC = 100
A, VCE = 5.0 V,
RS =1.0k
,f=10 Hz to 15.7 kHz
4.0
dB
td
Delay Time
VCC = 3.0 V, VBE = 0.5 V,
35
ns
tr
Rise Time
IC = 10 mA, IB1 = 1.0 mA
35
ns
ts
Storage Time
VCC = 3.0 V, IC = 10mA
225
ns
tf
Fall Time
IB1 = IB2 = 1.0 mA
75
ns
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
2N3906
/
MMBT3906
/
PZT3906
PNP General Purpose Amplifier
(continued)
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