參數(shù)資料
型號(hào): 2N3960J
廠商: SEMICOA CORP
元件分類: 小信號(hào)晶體管
英文描述: 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
封裝: HERMETIC SEALED, METAL CAN-3
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 420K
代理商: 2N3960J
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3960
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3960J)
JANTX level (2N3960JX)
JANTXV level (2N3960JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power switching transistor
NPN silicon transistor
Features
Hermetically sealed TO-18 metal can
Also available in chip configuration
Chip geometry 0003
Reference document:
MIL-PRF-19500/399
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
12
Volts
Collector-Base Voltage
VCBO
20
Volts
Emitter-Base Voltage
VEBO
4.5
Volts
Power Dissipation, TA = 25°C
Derate linearly above 25
°C
PT
400
2.3
mW
mW/
°C
J
°C
Storage Temperature
TSTG
-65 to +200
°C
Semicoa Corporation
Operating Junction Temperature
T
-65 to +200
Copyright
2010
相關(guān)PDF資料
PDF描述
2N3960 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N396A 20 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-5
2N3999SMD05-JQR-AR4 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AA
2N3999SMD05R4 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AA
2N3999SMD05-JQR 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N3960TX 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 12V 0.05A 3-Pin TO-18
2N3960UB 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk
2N3960UB_02 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon NPN Transistor
2N3961 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1A I(C) | TO-102
2N3962 功能描述:兩極晶體管 - BJT PNP Low Lvl SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2