參數(shù)資料
型號(hào): 2N3906
廠商: STMICROELECTRONICS
元件分類: 小信號(hào)晶體管
英文描述: 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: TO-92, 3 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 60K
代理商: 2N3906
THERMAL DATA
Rthj-amb
Rthj-Case
Thermal Resistance Junction-Ambient
Max
Thermal Resistance Junction-Case
Max
200
83.3
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEX
Collector Cut-off
Current (VBE = 3 V)
VCE = -30 V
-50
nA
IBEX
Base Cut-off Current
(VBE = 3 V)
VCE = -30 V
-50
nA
V(BR)CEO
Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = -1 mA
-40
V
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = -10
A
-60
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = -10
A
-6
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = -10 mA
IB = -1 mA
IC = -50 mA
IB = -5 mA
-0.25
-0.4
V
VBE(sat)
Base-Emitter
Saturation Voltage
IC = -10 mA
IB = -1 mA
IC = -50 mA
IB = -5 mA
-0.65
-0.85
-0.95
V
hFE
DC Current Gain
IC = -0.1 mA
VCE = -1 V
IC = -1 mA
VCE = -1 V
IC = -10 mA
VCE = -1 V
IC = -50 mA
VCE = -1 V
IC = -100 mA
VCE = -1 V
60
80
100
60
30
300
fT
Transition Frequency
IC = -10mA VCE = -20 V f = 100 MHz
250
MHz
NF
Noise Figure
VCE = -5 V
IC = -0.1 mA
f = 10 Hz
to 15.7 KHz
RG = 1 K
4dB
CCBO
Collector-Base
Capacitance
IE = 0
VCB = -5 V
f = 100 KHz
6
pF
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = -0.5 V
f = 100 KHz
25
pF
td
Delay Time
IC = -10 mA
IB = -1 mA
VCC = -3V
35
ns
tr
Rise Time
35
ns
ts
Storage Time
IC = -10 mA
IB1 = -IB2 = -1 mA
VCC = -3V
225
ns
tf
Fall Time
72
ns
Pulsed: Pulse duration = 300 s, duty cycle ≤ 2 %
2N3906
2/5
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