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參數(shù)資料
| 型號(hào)： | 2N3906 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN Silicon General Purpose Transistors(NPN通用型晶體管) |
| 中文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-226AA, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 145K |
| 代理商： | 2N3906 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
40
Vdc
Collector–Base Voltage
40
Vdc
Emitter–Base Voltage
5.0
Vdc
Collector Current — Continuous
200
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Power Dissipation @ TA = 60
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
PD
250
mW
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS(1)
TJ, Tstg
–55 to +150
°
C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
RJA
200
°
C/W
Thermal Resistance, Junction to Case
RJC
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
—
Vdc
Collector–Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
40
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
—
50
nAdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
—
50
nAdc
1. Indicates Data in addition to JEDEC Requirements.
2. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N3905/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
REV 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3905 | PNP General Purpose Amplifier(PNP型通用放大器) |
| 2N4123 | NPN Silicon General Purpose Transistors(集電極-發(fā)射極電壓30V，集電極-基極電壓40V的NPN通用型晶體管) |
| 2N4123 | General Purpose NPN Silicon Transistor(30V（集電極-發(fā)射極）通用型硅NPN晶體管) |
| 2N4124 | NPN Silicon General Purpose Transistors(集電極-發(fā)射極電壓25V，集電極-基極電壓30V的NPN通用型晶體管) |
| 2N4123 | NPN General Purpose Amplifier(NPN型通用放大器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3906 GE84-87 | 制造商:GE 功能描述:2N3906 |
| 2N3906 N | 制造商:N 功能描述:2N3906 |
| 2N3906 PBFREE | 制造商:Central Semiconductor Corp 功能描述: |
| 2N3906(TE2,T) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 40V 0.2A 3-Pin TO-92 T/R |
| 2N3906,116 | 功能描述:TRANS PNP SW HS 200MA 40V TO92 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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