參數(shù)資料
型號: 2N3906,116
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, SC-43A, 3 PIN
文件頁數(shù): 3/7頁
文件大?。?/td> 57K
代理商: 2N3906,116
2004 Oct 11
3
Philips Semiconductors
Product specication
PNP switching transistor
2N3906
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = 30 V; IE =0 A
50
nA
IEBO
emitter-base cut-off current
VEB = 6 V; IC =0 A
50
nA
hFE
DC current gain
VCE = 1 V; note 1; see Fig.2
IC = 0.1 mA
60
IC = 1mA
80
IC = 10 mA
100
300
IC = 50 mA
60
IC = 100 mA
30
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 1 mA; note 1
200
mV
IC = 50 mA; IB = 5 mA; note 1
200
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA; note 1
850
mV
IC = 50 mA; IB = 5 mA; note 1
950
mV
Cc
collector capacitance
VCB = 5 V; IE =ie = 0 A; f = 1 MHz
4.5
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 500 mV; f = 1 MHz
10
pF
fT
transition frequency
VCE = 20 V; IC = 10 mA; f = 100 MHz
250
MHz
F
noise gure
VCE = 5 V; IC = 100 A; RS =1k;
f = 10 Hz to 15.7 kHz
4dB
Switching times (between 10 % and 90 % levels); see Fig.3
ton
turn-on time
ICon = 10 mA; IBon = 1 mA;
IBoff =1mA
65
ns
td
delay time
35
ns
tr
rise time
35
ns
toff
turn-off time
300
ns
ts
storage time
225
ns
tf
fall time
75
ns
相關(guān)PDF資料
PDF描述
2N3906/D26Z-J61Z 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N3906/D75Z-J18Z 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N3906/D75Z-J61Z 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N3906/D74Z-J60Z 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N3906-J05Z 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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