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參數(shù)資料
| 型號： | 2N3906,116 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43A, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 57K |
| 代理商： | 2N3906,116 |
2004 Oct 11
2
Philips Semiconductors
Product specication
PNP switching transistor
2N3906
FEATURES
Low current (max. 200 mA)
Low voltage (max. 40 V).
APPLICATIONS
High-speed switching in industrial applications.
DESCRIPTION
PNP switching transistor in a TO-92; SOT54 plastic
package. NPN complement: 2N3904.
PINNING
PIN
DESCRIPTION
1
collector
2
base
3
emitter
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage1
3
2
MAM280
1
2
3
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
2N3906
SC-43A
plastic single-ended leaded (through hole) package; 3 leads
SOT54
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
emitter-base voltage
open collector
6V
IC
collector current (DC)
200
mA
ICM
peak collector current
300
mA
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
500
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
note 1
250
K/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3906A | 制造商:Diodes Incorporated 功能描述: 制造商:Motorola Inc 功能描述: 制造商:Harris Corporation 功能描述:Bipolar Junction Transistor, PNP Type, TO-92 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, PNP Type, TO-92 制造商:National Semiconductor Corporation 功能描述:Bipolar Junction Transistor, PNP Type, TO-92 制造商:Vishay Dale 功能描述:Bipolar Junction Transistor, PNP Type, TO-92 |
| 2N3906-A | 功能描述:兩極晶體管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3906AP | 制造商:Diodes Incorporated 功能描述:Bipolar Junction Transistor, PNP Type, TO-92VAR 制造商:National Semiconductor Corporation 功能描述:Bipolar Junction Transistor, PNP Type, TO-92VAR 制造商:NXP Semiconductors 功能描述:Bipolar Junction Transistor, PNP Type, TO-92VAR |
| 2N3906-AP | 功能描述:兩極晶體管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3906-AT | 制造商:KEC Corporation 功能描述:2N3906-AT |
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