- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371457 > 2N3904 (FAIRCHILD SEMICONDUCTOR CORP) NPN General Purpose Amplifier(NPN型通用放大器) PDF資料下載
參數(shù)資料
| 型號： | 2N3904 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN General Purpose Amplifier(NPN型通用放大器) |
| 中文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 64K |
| 代理商： | 2N3904 |
2
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 30 V, V
EB
= 0
V
CE
= 30 V, V
EB
= 0
40
60
6.0
V
V
V
nA
nA
50
50
OFF CHARACTERISTICS
ON CHARACTERISTICS*
h
FE
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
SWITCHING CHARACTERISTICS
(except MMPQ3904)
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
Spice Model
I
= 10 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 5.0 V, I
E
= 0,
f = 1.0 MHz
V
= 0.5 V, I
C
= 0,
f = 1.0 MHz
I
C
= 100
μ
A, V
= 5.0 V,
R
S
=1.0k
, f=10 Hz to 15.7 kHz
300
MHz
C
obo
Output Capacitance
4.0
pF
C
ibo
Input Capacitance
8.0
pF
NF
Noise Figure
(except MMPQ3904)
5.0
dB
V
CC
= 3.0 V, V
BE
= 0.5 V,
I
C
= 10 mA, I
B1
= 1.0 mA
V
CC
= 3.0 V, I
C
= 10mA
I
B1
= I
B2
= 1.0 mA
35
35
200
50
ns
ns
ns
ns
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
40
70
100
60
30
300
V
CE(sat)
Collector-Emitter Saturation Voltage
0.2
0.3
0.85
0.95
V
V
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
0.65
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3905 | NPN Silicon General Purpose Transistors(NPN通用型晶體管) |
| 2N3905 | General Purpose PNP Silicon Transistor(40V（集電極-發(fā)射極）通用型硅PNP晶體管) |
| 2N3906 | NPN Silicon General Purpose Transistors(NPN通用型晶體管) |
| 2N3905 | PNP General Purpose Amplifier(PNP型通用放大器) |
| 2N4123 | NPN Silicon General Purpose Transistors(集電極-發(fā)射極電壓30V，集電極-基極電壓40V的NPN通用型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3904 J05Z | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans GP BJT NPN 40V 0.2A 3-Pin TO-92 Bulk |
| 2N3904(TE2,T) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 40V 0.2A 3-Pin TO-92 T/R |
| 2N3904,116 | 功能描述:TRANS NPN SW HS 200MA 40V TO92 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2N3904,412 | 功能描述:兩極晶體管 - BJT TRANS SW BULK STR LEAD RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3904 | 制造商:UNBRANDED 功能描述:TRANSISTOR NPN TO-92 制造商:NTE Electronics 功能描述:RF TRANSISTOR, NPN, 40V, 250MHZ |
發(fā)布緊急采購，3分鐘左右您將得到回復。