參數(shù)資料
型號: 2N3903
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: NPN Silicon General Purpose Transistors(NPN通用型晶體管)
中文描述: 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件頁數(shù): 1/8頁
文件大小: 188K
代理商: 2N3903
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
40
Vdc
Collector–Base Voltage
60
Vdc
Emitter–Base Voltage
6.0
Vdc
Collector Current — Continuous
200
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS(1)
TJ, Tstg
–55 to +150
°
C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
200
°
C/W
Thermal Resistance, Junction to Case
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc
Collector–Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
60
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
6.0
Vdc
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
50
nAdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
50
nAdc
1. Indicates Data in addition to JEDEC Requirements.
2. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N3903/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
REV 2
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