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參數(shù)資料
| 型號： | 2N3868S |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP Power Transistors |
| 中文描述： | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2N3868S |
2N3867, S; 2N3868, S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 500 mAdc, V
CE
= 1.0 Vdc
I
C
= 1.5 Adc, V
CE
= 2.0 Vdc
I
C
= 2.5 Adc, V
CE
= 3.0 Vdc
I
C
= 3.0 Adc, V
CE
= 5.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 500 mAdc, I
B
= 50 mAdc
I
C
= 1.5 Adc, I
B
= 150 mAdc
I
C
= 2.5 Adc, I
B
= 250 mAdc
Base-Emitter Saturation Voltage
I
C
= 500 mAdc, I
B
= 50 mAdc
I
C
= 1.5 Adc, I
B
= 150 mAdc
I
C
= 2.5 Adc, I
B
= 250 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
I
C
= 100 mAdc, V
CE
= 5.0 Vdc, f = 20 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Input Capacitance
V
EB
= 3.0 Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time
V
CC
= -30 Vdc, V
EB
= 0,
Rise Time
I
C
= 1.5 Adc, I
B1
=
150 mAdc
Storage Time
V
CC
= -30 Vdc, V
EB
= 0,
Fall Time
I
C
= 1.5Adc, I
B1
=
I
B2
=
150 mAdc
Turn-On Time
V
CC
= 30, I
C
= 1.5 Adc, I
B
= 150 mAdc
Turn-Off Time
V
CC
= 30, I
C
= 1.5 Adc, I
B
= 150 mAdc
SAFE OPERATING AREA
DC Tests
T
C
= 25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 3.33 Vdc, I
C
= 3.0 Adc
Test 2
V
CE
= 40 Vdc, I
C
= 160 mAdc
V
CE
= 60 Vdc, I
C
= 80 mAdc
(3) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
2N3867, S
2N3868, S
2N3867, S
2N3868, S
2N3867, S
2N3868, S
All Types
h
FE
50
35
40
30
25
20
20
200
150
V
CE(sat)
0.5
0.75
1.5
1.0
1.4
2.0
Vdc
V
BE(sat)
0.9
Vdc
h
fe
3.0
12
C
obo
120
800
pF
C
ibo
pF
t
d
t
r
t
s
t
f
35
65
500
100
η
s
η
s
η
s
η
s
t
on
100
η
s
t
off
600
η
s
2N3867, S
2N3868, S
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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