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參數(shù)資料
| 型號： | 2N3867 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2N3867 |
6 Lake Street, Lawrence, MA 01841
03/98 REV: D
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803
Page 2 of 2
2N3867, S, 2N3868, S, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 500 mAdc, VCE = 1.0 Vdc
2N3867, S
2N3868, S
IC = 1.5 Adc, VCE = 2.0 Vdc
2N3867, S
2N3868, S
IC = 2.5 Adc, VCE = 3.0 Vdc
2N3867, S
2N3868, S
IC = 3.0 Adc, VCE = 5.0 Vdc
All Types
hFE
50
35
40
30
25
20
200
150
Collector-Emitter Saturation Voltage
IC = 500 mAdc, IB = 50 mAdc
IC = 1.5 Adc, IB = 150 mAdc
IC = 2.5 Adc, IB = 250 mAdc
VCE(sat)
0.5
0.75
1.5
Vdc
Base-Emitter Saturation Voltage
IC = 500 mAdc, IB = 50 mAdc
IC = 1.5 Adc, IB = 150 mAdc
IC = 2.5 Adc, IB = 250 mAdc
VBE(sat)
1.0
1.4
2.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
IC = 100 mAdc, VCE = 5.0 Vdc, f = 20 MHz
h
fe
3.0
12
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
120
pF
Input Capacitance
VEB = 3.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cibo
800
pF
SWITCHING CHARACTERISTICS
Delay Time
VCC = 30 Vdc, VEB = 0,
td
35
ηs
Rise Time
IC = 1.5 Adc, IB1 = 150 mAdc
tr
65
ηs
Storage Time
VCC = 30 Vdc, VEB = 0,
ts
500
ηs
Fall Time
IC = 1.5Adc, IB1 = IB2 = 150 mAdc
tf
100
ηs
Turn-On Time
VCC = 30, IC = 1.5 Adc, IB = 150 mAdc
ton
100
ηs
Turn-Off Time
VCC = 30, IC = 1.5 Adc, IB = 150 mAdc
toff
600
ηs
SAFE OPERATING AREA
DC Tests
TC = 25
0C, 1 Cycle, t = 1.0 s
Test 1
VCE = 3.33 Vdc, IC = 3.0 Adc
Test 2
VCE = 40 Vdc, IC = 160 mAdc
2N3867, S
VCE = 60 Vdc, IC = 80 mAdc
2N3868, S
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%.
相關PDF資料 |
PDF描述 |
|---|---|
| 2N3868 | 3 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3867S | 3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N3868SMD05-JQR-BR4 | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-276AA |
| 2N3868 | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N3868 | 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-5 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3867_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP SILICON LOW POWER TRANSISTOR |
| 2N3867S | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 40V 3A 3PIN TO-39 - Bulk 制造商: 功能描述: 制造商:undefined 功能描述: |
| 2N3867SMD05 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed |
| 2N3868 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 3A 3PIN TO-5 - Bulk 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR, PNP, 80V, 1A, TO-205AD-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:7W; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Min:-65C; No. of Pins:3 |
| 2N3868JAN | 制造商:n/a 功能描述:2N3868JAN |
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