- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49841 > 2N3867S 3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N3867S |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2N3867S |
6 Lake Street, Lawrence, MA 01841
03/98 REV: D
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
2N3867
2N3867S
2N3868
2N3868S
Units
Collector-Emitter Voltage
VCEO
40
60
Vdc
Collector-Base Voltage
VCBO
40
60
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
Collector Current -- Continuous
IC
3.0
Adc
Total Power Dissipation @ TA = 25
0C(1)
@ TC =
25
0C(2)
PT
1.0
10
W
Operating & Storage Junction
Temperature Range
TOP, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
17.5
0C/W
1) Derate linearly 5.71 mW/
0C for TA > +250C
2) Derate linearly 57.1 mW/
0C for TC > +250C
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 Adc
2N3867, S
2N3868, S
V(BR)CBO
40
60
Vdc
Collector-Emitter Breakdown Voltage
IC = 20 mAdc
2N3867, S
2N3868, S
V(BR)CEO
40
60
Vdc
Emitter-Base Breakdown Voltage
IE = 100 Adc
V(BR)EBO
4.0
Vdc
Collector-Emitter Cutoff Current
VEB = 2.0 Vdc, VCE = 40 Vdc
2N3867, S
VEB = 2.0 Vdc, VCE = 60 Vdc
2N3868, S
ICEX
1.0
Adc
TECHNICAL DATA
2N3867, 2N3868
TO-5
2N3867S, 2N3868S
TO-39 (TO-205AD)
2N3867 JAN, JTX, JTXV
2N3867S JAN, JTX, JTXV
2N3868 JAN, JTX, JTXV
2N3868S JAN, JTX, JTXV
Processed per MIL-PRF-19500/350
PNP SILICON SWITCHING TRANSISTOR
MIL-PRF
QPL
DEVICES
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3868SMD05-JQR-BR4 | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-276AA |
| 2N3868 | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N3868 | 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-5 |
| 2N3868 | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3878 | 4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3867SMD05 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed |
| 2N3868 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 3A 3PIN TO-5 - Bulk 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR, PNP, 80V, 1A, TO-205AD-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:7W; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Min:-65C; No. of Pins:3 |
| 2N3868JAN | 制造商:n/a 功能描述:2N3868JAN |
| 2N3868JANTX | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 3A 3-Pin TO-5 |
| 2N3868JANTXV | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 3A 3-Pin TO-5 制造商:Microsemi 功能描述:Trans GP BJT PNP 60V 3A 3-Pin TO-5 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。