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參數(shù)資料
| 型號： | 2N3767SMD05R4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
| 封裝： | CERAMIC, SMD0.5, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 17K |
| 代理商： | 2N3767SMD05R4 |
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IC = 100mA
IB = 0
VCE = 100V
VBE = 1.5V
VCE = 70V
VBE = 1.5V
TA = 150°C
VEB = 6V
IC = 0
VCE = 80V
IB = 0
VCB = 100V
IE = 0
IC = 50mA
VCE = 5V
IC = 500mA
VCE = 5V
IC = 1.0A
VCE = 10V
IC = 1.0A
IB = 0.1A
IC = 1.0A
VCE = 10V
IC = 500mA
f = 10MHz
VCB = 10V
IC = 0A
f = 100KHz
VCE = 10V
IC = 100mA
f = 1.0kHz
80
100
1.0
0.75
0.7
0.1
30
40
160
20
2.5
1.5
10
50
40
OFF CHARACTERISTICS
Document Number 3781
Issue 3
2N3767SMD05
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
1) Pulse test : Pulse Width < 100
s ,Duty Cycle <1%
2) ft is defined as the frequency at which |hfe| extrapolates to untity.
ON CHARACTERISTICS
TRANSIENT CHARACTERISTICS
V
A
mA
—
V
MHz
pF
—
V(BR)CEO
Collector Emitter Breakdown Voltage1
ICEX
Collector Cutoff Current
IEBO
Emitter Base Cutoff Current
ICEO
Collector Emitter Cutoff Current
ICBO
Collector Base Cutoff Current
hFE
DC Current Gain
VCE(sat)
Collector Emitter Saturation Voltage
VBE
Base Emitter Voltage
fT
Transistion Frequency
COB
Common Base Output Capacitance
hfe
Small Signal Current Gain
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2N376A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3 |
| 2N377 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-5 |
| 2N3771 | 功能描述:兩極晶體管 - BJT NPN Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3771 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3 |
| 2N3771/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High Power NPN Silicon Power Transistors |
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