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參數(shù)資料
| 型號(hào)： | 2N3767 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 29K |
| 代理商： | 2N3767 |
6 Lake Street, Lawrence, MA 01841
3/98 REV: B
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
2N3766
2N3767
Units
Collector-Emitter Voltage
VCEO
60
80
Vdc
Collector-Base Voltage
VCBO
80
100
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Base Current
IB
2.0
Adc
Collector Current
IC
4.0
Adc
Total Power Dissipation @ TC = 25
0C (1)
PT
25
W
Operating & Storage Junction
Temperature Range
TJ, Tstg
-55 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
7.0
0C/W
1) Derate linearly 143 mW/
0C between TC = 250C and TC = 2000C
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N3766
2N3767
V(BR)CEO
60
80
Vdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc
2N3766
VCE = 80 Vdc
2N3767
ICEO
500
Adc
Collector-Emitter Cutoff Current
VCE = 80 Vdc, VBE = 1.5 Vdc
2N3766
VCE = 100 Vdc, VBE = 1.5 Vdc
2N3767
ICEX
10
Adc
Collector-Base Cutoff Current
VCB = 80 Vdc
2N3766
VCB = 100 Vdc
2N3767
ICBO
10
Adc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
IEBO
500
Adc
TECHNICAL DATA
2N3766 JAN, JTX, JTXV
2N3767 JAN, JTX, JTXV
Processed per MIL-PRF-19500/518
NPN POWER SILICON TRANSISTOR
TO-66 (TO-213AA)
MIL-PRF
QPL
DEVICES
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| 2N3767SMD05 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | SMT |
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